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US 2017/0243984 A1Published application
Semiconductor device comprising a diode and electrostatic discharge protection device
AssigneeIpdia
InventorsGilles FERRU, Nicolas NOHLIER, Bertrand COURIVAUD
Life of this patent
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Abstract
A semiconductor device comprising at least two holes (18, 20) realised in a substrate (6), having each a width and a depth, and forming a diode (4), wherein the substrate (6) has a determined type of doping, wherein the inner wall of each hole (18, 20) is doped so that its doping is of the other type than the doping of the substrate (6), and wherein the width and/or the depth of a hole (18, 20) is different from the width and/or the depth of a neighboring hole.
Claims13
A semiconductor device comprising at least two holes realised in a substrate, having each a width and a depth, and forming a diode
- wherein the substrate has a determined type of doping, and
- wherein the inner wall of each hole is doped so that its doping is from the other type than the doping of the substrate,
- characterised in that the width and/or the depth of a hole is different from the width and/or the depth of a neighboring hole.
Dependencies are inferred from the claim text.