Durable, heat-resistant multi-layer coatings and coated articles

2:

• An article in accordance with claim 1, wherein said protective coating structure is stable at a temperature of at least 400° C.

3:

• An article in accordance with claim 1, wherein said second layer includes a layer of silicon-comprising oxide generated from an organic precursor or an inorganic precursor.

4:

• An article in accordance with claim 1, wherein said second layer is deposited from an organic silicon-containing precursor.

5:

• An article in accordance with claim 4, wherein the organic silicon-containing precursor is BTCSE.

6:

• An article in accordance with claim 1, wherein said protective coating structure defines a durable hydrophobic protective surface coating.

7:

• An article in accordance with claim 1, wherein said article is selected from the group consisting of the following:
• a MEMS device, an electronic device, an IC chip, a general purpose electronic board, a GPS device, a cell phone component, a PDA assistant component, a computer component, a digital camera component, a radio communications component, a memory stick component, a nanoimprint lithography mold, a microfluidic device, and a medical structure.

9:

• A protective coating structure in accordance with claim 8, wherein said first layer metal oxide is deposited from an organometallic precursor using an ALD technique.

10:

• A protective coating structure in accordance with claim 8, wherein said second layer is a silicon-comprising oxide which is deposited using a CVD technique that employs a stagnation reaction.

11:

• A protective coating structure in accordance with claim 8, wherein said third layer is a functional organic layer which is deposited using a CVD technique that employs a stagnation reaction.

12:

• A protective coating structure in accordance with claim 8, wherein said second layer includes a metal oxide and a silicon-comprising oxide.

13:

• A protective coating structure in accordance with claim 8, wherein said first, second, and third layers are deposited in the same processing chamber without exposing the surface of said first layer or the surface of said second layer to ambient conditions.

15:

• A protective coating structure in accordance with claim 8, wherein said vapor deposited first layer is a metal oxide coating having a thickness of approximately 5 angstroms to 200 angstroms.

16:

• A protective coating structure in accordance with claim 8, wherein said vapor deposited second layer is a silicon-comprising oxide having a coating thickness of approximately 20 angstroms to 200 angstroms.

17:

• A protective coating structure in accordance with claim 8, wherein said second layer is deposited from an organic silicon-containing precursor.

18:

• A protective coating structure in accordance with claim 17, wherein said organic silicon-containing precursor is BTCSE.