Methods of Producing a Semiconductor with Decreased Oxygen Contamination and Impurities
AssigneeMossey Creek Technologies, Inc.
InventorsJohn Carberry, Tim Wilson
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Abstract
A method for manufacturing a semiconductor for a solar cell and other applications is disclosed. A separating layer may be introduced into a mold having an interior defining a shape of a solar cell or other substantially planer object. A silicon nitride coating may be applied onto one or more interior surfaces of the mold. A planar capillary space is formed along the conductive layer. The silicon is melted under an ultra-low oxygen content cover atmosphere and allowed to flow into the capillary space. The melted silicon is then cooled within the capillary space such that the silicon forms one part of a P-N junction in the body of the semiconductor.
Claims19
A method of manufacturing a semiconductor having sub millimeter net shape geometries, said method comprising:
- introducing a separating layer into a mold having an interior defining the sub millimeter shape geometries;
- forming a planar capillary space along at least two planer separating layers;
- placing silicon in fluid communication with the capillary space;
- melting the silicon in an ultra-low oxygen content cover atmosphere;
- flowing the melted silicon into the planar capillary space;
- cooling the melted silicon within the planar capillary space;
- and
- forming the semiconductor, the silicon forming one part of a P-N junction, the silicon being doped with either a P-type dopant or a N-type dopant.
The method of claim 5, where the silicon is at least 99.9999999% pure.
Dependencies are inferred from the claim text.