Nitrogen-containing compounds for etching semiconductor structures
AssigneeAmerican Air Liquide, Inc.
InventorsVijay SURLA, Rahul GUPTA, Venkateswara R. PALLEM
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Abstract
A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one C≡N or C═N functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.
Claims20
A method of depositing an etch-resistant polymer layer on a substrate, the method comprising:
- introducing a vapor of an organofluorine compound into a reaction chamber containing a substrate, the organofluorine compound containing a C≡N or C═N functional group;
- and
- plasma activating an organofluorine compound to form the etch-resistant polymer layer on the substrate.
A method of depositing an N-containing polymer passivation layer on a substrate, the method comprising:
- introducing a vapor of an organofluorine compound into a reaction chamber containing a substrate, the organofluorine compound containing a C≡N or C═N functional group;
- and
- producing fragments of the organofluorine compound by activating a plasma to form the N-containing polymer passivation layer on the substrate.
Dependencies are inferred from the claim text.