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US 2017/0217783 A1Published application
Compound semiconductor and manufacturing method thereof
AssigneeLG Chem, Ltd.
InventorsJae-Ki LEE, Tae-Hoon KIM, Cheol-Hee PARK
Life of this patent
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Abstract
Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below: M1aCo4Sb12-xM2x Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≦a≦1.8, and 0≦x≦0.6.
Claims13
A compound semiconductor, expressed by Chemical Formula 1 below:
- M1aCo4Sb12-xM2x Chemical Formula 1
- where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≦a≦1.8, and 0<x≦0.6.
Dependencies are inferred from the claim text.