Germanane analogs and optoelectronic devices using the same
AssigneeOhio State Innovation Foundation
InventorsJoshua Goldberger, Shishi Jiang, Elisabeth Bianco
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Abstract
The present invention provides novel two-dimensional van der Waals materials and stacks of those materials. Also provided are methods of making and using such materials.
Claims26
A two-dimensional layer comprising M-R, wherein M is selected from the group consisting of Ge, and Sn;
- and wherein R is C1-18 alkyl.
A two-dimensional layer comprising Ge(CH3).
An alloy comprising Ge1-xSnxR3, wherein R3 is H, OH or C1-18 is alkyl and x is about 0 to about 1;
- wherein R3 is not H if x is zero.
An alloy comprising Ge1-xSixR6, wherein R6 is OH or C1-18 alkyl and x is about 0 to about 1.
A method of synthesizing M-R comprising:
- a. reacting A-M2 with R—X to form M-R;
- wherein A is an alkaline earth metal;
- wherein M is Ge or Sn;
- wherein X is a halogen;
- and
- wherein R is C1-18 alkyl or H.
A method of synthesizing Ge1-xSnxR3 comprising:
- a. reacting AGe2-ySny with R3—X to form Ge1-xSnxR3;
- wherein A is an alkaline earth metal;
- wherein x is about 0 to about 1;
- wherein y is about 0 to about 2;
- wherein X is a halogen;
- and
- wherein R3 is C1-18 alkyl, OH or H.
A method of synthesizing Ge1-xSixR6 comprising:
- a. reacting CaGe2-ySiy with R6—X to form Ge1-xSixR6;
- wherein x is about 0 to about 1;
- wherein y is about 0 to about 2;
- wherein X is a halogen;
- and
- wherein R6 is C1-18 alkyl or OH.
Dependencies are inferred from the claim text.