Mlu based accelerometer using a magnetic tunnel junction
AssigneeCrocus Technology SA
InventorAli Alaoui
Life of this patent
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Abstract
An MLU-based accelerometer including: at least one MLU including a tunnel barrier layer between a first magnetic layer having a fixed first magnetization direction and a second magnetic layer having a second magnetization direction that can be varied. A proof-mass includes a ferromagnetic material having a proof-mass magnetization inducing a proof-mass field, the proof-mass being elastically suspended such as to be deflected in at least one direction when subjected to an acceleration vector. The proof-mass is magnetically coupled to the MLU cell via the proof-mass field. A read module is configured for determining a magnetoresistance of each MLU cell such as to determine an acceleration vector from the deflection of the proof-mass relative to any one of the at least one MLU cell.
Claims5
An MLU-based accelerometer comprising:
- at least one MLU cell comprising a tunnel barrier layer between a first magnetic layer having a fixed first magnetization direction and a second magnetic layer having a second magnetization direction that can be varied;
- a proof-mass comprising a ferromagnetic material having a proof-mass magnetization inducing a proof-mass field, the proof-mass being elastically suspended such as to be able of being deflected in at least one direction when subjected to an acceleration vector, the proof-mass being magnetically coupled to said at least one MLU cell via the proof-mass field;
- characterized in that the MLU-based accelerometer further comprises,
- a read module configured for determining a magnetoresistance of each of said at least one MLU cell such as to determine an acceleration vector from the deflection of the proof-mass relative to any one of said at least one MLU cell
- wherein said read module comprises means for switching the second magnetization to a highly sensitive and linear state in which the second magnetization direction is in an intermediary state between parallel and antiparallel to the first magnetization direction;
- and means for determining a degree of alignment between the sense second magnetization direction and the storage first magnetization direction.
Dependencies are inferred from the claim text.