Magnetic storage device
AssigneeKabushiki Kaisha Toshiba
InventorsShintaro SAKAI, Keisuke NAKATSUKA, Hiroyuki KANAYA, Yoshinori KUMURA, Katsuyuki FUJITA
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Abstract
According to an embodiment, a magnetic storage device includes a semiconductor region including a trench; a gate electrode disposed in the trench; an insulation film covering the gate electrode and provided in a manner to fill the trench; and a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being provided on a top surface of the insulation film.
Claims15
A magnetic storage device comprising:
- a semiconductor region including a trench;
- a gate electrode disposed in the trench;
- an insulation film covering the gate electrode and disposed in the trench;
- and
- a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the non-magnetic layer in a side surface of the magnetoresistive effect element including the non-magnetic layer being disposed on a top surface of the insulation film.
A magnetic storage device comprising:
- a first semiconductor region including a hole;
- a magnetoresistive effect element including at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer which couples the first ferromagnetic layer and the second ferromagnetic layer, a side surface of the magnetoresistive effect element including the non-magnetic layer being disposed toward a bottom surface of the hole;
- a second semiconductor region disposed above a top surface of the magnetoresistive effect element;
- an insulation film provided above a top surface of the second semiconductor region;
- and
- agate electrode disposed on a top surface of the insulation film.
A magnetic storage device comprising:
- a first semiconductor region;
- a magnetoresistive effect element which is disposed on a top surface of the first semiconductor region and in which at least a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer are stacked;
- a second semiconductor region disposed on a top surface of the first semiconductor region and disposed on an outer side surface of the magnetoresistive effect element;
- an insulation region disposed on an outer side surface of the second semiconductor region;
- a conductive region disposed on an outer side surface of the insulation region;
- and
- a third semiconductor region disposed on top surfaces of the magnetoresistive effect element and the second semiconductor region.
Dependencies are inferred from the claim text.