Corrosion-resistant components and methods of making

A green laminate configured for use with a semiconductor processing reactor, the green laminate comprising:

• a first layer of green sinterable material selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicate-based materials, and mixtures of two or more thereof;
• a second layer of green sinterable material selected from the group consisting of yttrium oxide (Y2O3), yttrium silicates, yttrium fluorides, yttrium oxyfluorides, yttrium aluminates, nitrides, complex nitride compounds, and combinations of two or more thereof;
• and,
• wherein upon heat treatment of the green laminate, the second layer has a porosity of at most 1% and an average grain size of at least about 100 nm and at most about 100 μm.

An assembly configured for use in fabricating semiconductor chips, the assembly comprising:

• a. a reactor;
• and,
• b. a corrosion-resistant component including:
• i. a ceramic insulating substrate;
• and,
• ii. a corrosion-resistant non-porous layer associated with the ceramic insulating substrate, the corrosion-resistant non-porous layer of a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer and is characterized by a microstructure substantially devoid of microcracks and fissures, and having:
• a thickness of at least 50 μm;
• a porosity of at most 1%;
• and,
• an average grain size of at least 100 nm and at most 100 μm.