Method of singulating semiconductor wafer having back layer
AssigneeSemiconductor Components Industries, LLC
InventorGordon M. GRIVNA
Life of this patent
Estimating the term…
Abstract
De are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a plate structure to apply a pressure to the wafer to separate the back layer in the singulation lines. The pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer.
Claims20
A method of singulating die from a wafer comprising:
- providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is disposed along the second major surface;
- placing the wafer onto a first carrier substrate, wherein the layer of material is adjacent the first carrier substrate;
- singulating the wafer through the spaces to form singulation lines while the wafer is coupled to the first carrier substrate, wherein the singulation lines terminate before penetrating completely through the layer of material;
- placing a substrate adjacent the first major surface, wherein the wafer is interposed between the substrate and the first carrier substrate;
- placing a plate structure against one of the first carrier substrate and the substrate;
- and
- applying a pressure with the plate structure to separate the layer of material in the singulation lines.
A method of singulating a wafer comprising:
- providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is disposed along the second major surface;
- placing the wafer onto a carrier tape, wherein the layer of material is adjacent the carrier tape;
- singulating the wafer through the spaces to form singulation lines, wherein singulating includes leaving at least a portion of the layer of material in the singulation lines;
- placing a substrate adjacent the first major surface of the wafer such that the wafer is interposed between the carrier tape and the substrate;
- placing a plate structure against one of the carrier tape and the substrate;
- and
- applying a pressure with the plate structure to separate the layer of material in the singulation lines.
A method of singulating a wafer comprising:
- providing a wafer having first and second opposing major surfaces, a plurality of die formed adjacent the first major surface, a layer of material along the second major surface, the plurality of die separated by singulation lines that terminate in proximity to the layer of material, and a first carrier substrate adjoining the layer of material, wherein the layer of material comprises a conductive material;
- and
- applying a pressure with a plate structure to at least one of the first major surface and the second major surface to separate the layer of material in the singulation lines.
Dependencies are inferred from the claim text.