Process for the preparation of pure octachlorotrisilanes and decachlorotetrasilanes
AssigneeEvonik Degussa GmbH
InventorsJanaina MARINAS PEREZ, Hartwig RAULEDER, Juergen Erwin LANG, Christian GOETZ, Goswin UEHLENBRUCK
Life of this patent
Estimating the term…
Abstract
The invention relates to a process for producing trimeric and/or quaternary silicon compounds or trimeric and/or quaternary germanium compounds, where a mixture of silicon compounds or a mixture of germanium compounds is exposed to a nonthermal plasma, and the resulting phase is subjected at least once to a vacuum rectification and filtration.
Claims20
A process for the preparation of at least one compound selected from the group consisting of trimeric and quaternary silicon compounds of the general formula Si3X8, Si4X10, or both
- or of at least one compound selected from the group consisting of trimeric and/or and quaternary germanium compounds of the general formula Ge3X8, and/or Ge4X10, or both, the process comprising:
- a) exposing a mixture of silicon compounds of the general formula
- Sin(R1 . . . R2n+2)
- or a mixture of germanium compounds of the general formula
- Gen(R1 . . . R2n+2)
- to a nonthermal plasma to form a resulting phase
- wherein n≧2, and R1 to R2n+2 is at least one element selected from the group consisting of hydrogen and X
- wherein X
- is at least one halogen selected from the group consisting of chlorine, bromine, and iodine, and
- b) subjecting the resulting phase at least once to a vacuum rectification and filtration, thereby obtaining
- silicon compounds of the general formula Si3X8 or Si4X10
- or germanium compounds of the general formula Ge3X8 or Ge4X10.
A process for the preparation of quaternary silicon compounds of the general formula Si4X10 or of quaternary germanium compounds of the general formula Ge4X10, the process comprising:
- a) exposing a mixture of silicon compounds of the general formula
- Sin(R1 . . . R2n+2)
- or a mixture of germanium compounds of the general formula
- Gen(R1 . . . R2n+2)
- to a nonthermal plasma to form a resulting phase
- wherein n≧2, and R1 to R2n+2 is at least one element selected from the group consisting of hydrogen and X
- wherein X is at least one halogen selected from the group consisting of chlorine, bromine, and iodine, and
- b) subjecting the resulting phase at least once to a vacuum rectification and filtration, thereby obtaining
- silicon compounds of the general formula Si4X10
- or germanium compounds of the general formula Ge4X10.
Dependencies are inferred from the claim text.