N-type organic semiconductor formulations and devices
OwnerLI Yuning, Bin SUNinventors
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Abstract
The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic nitrogen-containing additive (ONA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic applications and devices.
Claims19
An organic semiconductor formulation comprising:
- an organic semiconductor (OSC);
- and
- an organic nitrogen-containing additive (ONA) capable of enhancing n-type performance of the organic semiconductor.
A method of enhancing n-type performance of an organic semiconductor, comprising mixing the OSC with an organic nitrogen-containing additive (ONA) capable of enhancing the n-type performance of the organic semiconductor to thereby form an n-type semiconductor formulation, whereby the n-type performance of the organic semiconductor is enhanced.
An electronic device, comprising a semiconductor layer comprising:
- an organic semiconductor;
- and
- an organic nitrogen-containing additive (ONA) capable of enhancing the n-type performance of the organic semiconductor.
Dependencies are inferred from the claim text.