Magnetic memory element and magnetic memory

A magnetic memory, comprising:

• a plurality of magnetic memory elements, each of the plurality of magnetic memory elements including
• a first magnetic unit;
• a second magnetic unit having a tubular configuration extending in a first direction, the second magnetic unit including a first portion and a second portion, the first portion being provided between the first magnetic unit and the second portion, the first portion including a first region and a second region, the first region having a first saturation magnetization, a first magnetic anisotropy, and a first damping constant, the second region arranged with the first region in a second direction, the second direction being perpendicular to the first direction, the second region having at least one of a second saturation magnetization smaller than the first saturation magnetization, a second magnetic anisotropy smaller than the first magnetic anisotropy, or a second damping constant smaller than the first damping constant;
• and
• a nonmagnetic unit provided between the first magnetic unit and the second magnetic unit;
• a first word line;
• a first switching element, the first switching element including a first terminal, a second terminal, and a first gate, the first terminal being electrically connected to the second portion of one magnetic memory element of the plurality of magnetic memory elements, the second terminal being connected to a fixed potential, the first gate being connected to the first word line;
• and
• a first bit line electrically connected to the first magnetic unit of the one magnetic memory element of the plurality of magnetic memory elements.

A magnetic memory, comprising:

• a plurality of magnetic memory elements, each of the plurality of magnetic memory elements including
• a first magnetic unit;
• a second magnetic unit having a tubular configuration extending in a first direction, the second magnetic unit including a first portion and a second portion, the first portion being provided between the first magnetic unit and the second portion, the first portion including a first region and a second region, the first region having a first saturation magnetization, a first magnetic anisotropy, and a first damping constant, the second region arranged with the first region in a second direction, the second direction being perpendicular to the first direction, the second region having at least one of a second saturation magnetization smaller than the first saturation magnetization, a second magnetic anisotropy smaller than the first magnetic anisotropy, or a second damping constant smaller than the first damping constant;
• a nonmagnetic unit provided between the first magnetic unit and the second magnetic unit;
• and
• a third electrode provided around one portion of the second magnetic unit, the third electrode and the one portion of the second magnetic unit overlapping in the second direction;
• a first word line;
• a second word line;
• a first switching element, the first switching element including a first terminal, a second terminal, and a first gate, the first terminal being electrically connected to the second portion of one magnetic memory element of the plurality of magnetic memory elements, the second terminal being connected to a fixed potential, the first gate being connected to the first word line;
• a second switching element, the second switching element including a third terminal, a fourth terminal, and a second gate, the third terminal being electrically connected to the third electrode of one magnetic memory element of the plurality of magnetic memory elements, the fourth terminal being connected to a fixed potential, the second gate being connected to the second word line;
• and
• a first bit line electrically connected to the first magnetic unit of the one magnetic memory element of the plurality of magnetic memory elements.