III-N SEMICONDUCTOR LAYER ON Si SUBSTRATE

A method of growing III-N semiconducting material on a silicon substrate comprising the steps of:

• providing a single crystal silicon substrate;
• epitaxially growing a first layer of rare earth oxide on the silicon substrate, the first layer of rare earth oxide being substantially lattice matched to the silicon substrate;
• epitaxially growing a second layer of rare earth oxide on the first layer of rare earth oxide, the second layer of rare earth oxide having a different lattice constant then the first layer of rare earth oxide creating a stress in the second layer of rare earth oxide;
• nitridizing the second layer of epitaxial rare earth oxide with nitrogen plasma to form a nucleation layer;
• epitaxially growing a nucleation-buffer layer of REN RE-III-N material on the nucleation layer of epitaxial rare earth oxide;
• and
• epitaxially growing a layer of III-N material on the nucleation-buffer layer of epitaxial rare earth oxide.

III-N semiconducting material on a silicon substrate comprising:

• a single crystal silicon substrate;
• a first epitaxial layer of rare earth oxide positioned on the silicon substrate, the first layer of rare earth oxide being substantially lattice matched to the silicon substrate;
• a second epitaxial layer of rare earth oxide positioned on the first epitaxial layer of rare earth oxide, the second epitaxial layer of rare earth oxide having a different lattice constant then the first epitaxial layer of rare earth oxide with a stress in the second epitaxial layer of rare earth oxide;
• the second layer of epitaxial rare earth oxide being nitridized with nitrogen to form a nucleation layer;
• and
• an epitaxial layer of III-N material positioned on the nucleation layer of epitaxial rare earth oxide.

III-N semiconducting material on a silicon substrate comprising:

• a single crystal silicon substrate;
• a single crystal layer of rare earth oxide positioned on the silicon substrate and having a surface;
• the surface of the single crystal layer of rare earth oxide being terminated with nitrogen atoms forming a nitrogen atom template;
• a single crystal layer of III-N material positioned on the nitrogen atom template;
• and
• a single crystal epitaxial bulk semiconductor III-N layer positioned on the single crystal layer of III-N material.