Back to results
US 2017/0047912 A1Published application
Comparator including a magnetic tunnel junction (mtj) device and a transistor
AssigneeQUALCOMM Incorporated
InventorsJimmy Kan, Manu Rastogi, Kangho Lee, Seung Hyuk Kang
Life of this patent
Estimating the term…
Abstract
A particular apparatus includes a magnetic tunnel junction (MTJ) device and a transistor. The MTJ device and the transistor are included in a comparator that has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device.
Claims34
An apparatus comprising:
- a magnetic tunnel junction (MTJ) device configured to receive an input voltage;
- and
- a transistor including a gate,
- wherein an output of the MTJ device is coupled to a resistor and to the gate of the transistor, and wherein the MTJ device, the resistor, and the transistor are included in a comparator.
1 more element
(canceled)
(canceled)
A method of operation of a comparator, the method comprising:
- at the comparator including a magnetic tunnel junction (MTJ) device having an output coupled to a resistor and to a gate of a transistor, performing:
- switching from outputting a first voltage to outputting a second voltage when a third voltage applied to an input of the comparator increases above a first threshold voltage level, wherein the first threshold voltage level corresponds to a first switching point of the MTJ device;
- and
- switching from outputting the second voltage to outputting the first voltage when the third voltage applied to the input decreases below a second threshold voltage level, wherein the second threshold voltage level corresponds to a second switching point of the MTJ device.
1 more element
A method of operation of a comparator, the method comprising:
- switching from providing a first particular voltage at a first at an output of a magnetic tunnel junction (MTJ) device of the comparator to providing a second particular voltage at the output when a voltage applied to an input of the MTJ device increases above a first threshold voltage level, the first threshold voltage level corresponding to a first switching point of the MTJ device, and wherein the output is coupled to a resistor and to a gate of a transistor, and wherein the comparator includes the MTJ device, the transistor, and resistor;
- and
- switching from providing the second particular voltage at the output to providing the first particular voltage at the output when the voltage applied to the input decreases below a second threshold voltage level, the second threshold voltage level corresponding to a second switching point of of the MTJ device.
(canceled)
(canceled)
An apparatus comprising:
- means for comparing an input voltage to a threshold voltage, the means for comparing including a magnetic tunnel junction (MTJ) device and a transistor, wherein the means for comparing has a hysteresis property associated with multiple transition points that correspond to magnetic switching points of the MTJ device;
- and
- means for tuning the magnetic switching points of the MTJ device, the magnetic switching points switched to tune the MTJ from operating based on a first threshold voltage level pair to operating based on a second threshold voltage level pair.
Dependencies are inferred from the claim text.