Electronic circuit and data storage system

A method in accordance with any preceding claim, wherein the resistive element comprises semiconductive material, and said irradiating is arranged to change a conductivity of the semiconductive material.

A method in accordance with any preceding claim, wherein the resistive element comprises at least a portion of a layer of semiconductive material having a first conductivity, and said irradiating comprises

• irradiating at least a part of said portion with said electromagnetic radiation to increase the conductivity of said part of said portion such that the resistance of the resistive element changes from said first resistance to said second resistance.

A method in accordance with any preceding claim, wherein the resistive element is encased in material at least substantially transparent to visible light, and said irradiating comprises irradiating through said material at least substantially transparent to visible light.

A method in accordance with any preceding claim, wherein said irradiating comprises providing said electromagnetic radiation from a laser.

A method in accordance with any preceding claim, wherein said irradiating comprises irradiating with at least one pulse of said electromagnetic radiation.

A method in accordance with any preceding claim, further comprising heating the resistive element to a temperature of at least 100 C and beginning said irradiating while the resistive element is at said temperature.

A method in accordance with any preceding claim, wherein the circuit is arranged to provide an output dependent on the magnitude of the difference between said first resistance and said second resistance.

A method in accordance with any preceding claim, wherein the circuit further comprises a display element coupled to the resistive element and said irradiating is arranged to determine a state of the display element during an operation of the circuit.

A method in accordance with any preceding claim, wherein the circuit comprises a plurality of said resistive elements, each resistive element comprising at least a portion of a common or respective layer of semiconductive material, and said irradiating comprises irradiating at least a part of each portion with a selected amount of said electromagnetic radiation.

A method in accordance with any preceding claim, wherein said circuit is a memory circuit, the second resistance or the difference between the first resistance and the second resistance corresponding to a stored parameter or value.

A circuit comprising a resistive element and having a first configuration in which the resistive element has a first resistance, the circuit being adapted to enable exposure of at least part of the resistive element to electromagnetic radiation to change the resistance of the resistive element from said first resistance to a second resistance, wherein said second resistance is lower than said first resistance.

A method of storing data, the method comprising:

• receiving a piece of data to be stored;
• determining a number according to the piece of data;
• irradiating at least part of a resistive element with said number of pulses of electromagnetic radiation to change a resistance of the resistive element from a first resistance to a second resistance, wherein the second resistance is lower than the first resistance, and a difference between the first resistance and the second resistance is dependent on said number.

A method of storing data, the method comprising:

• receiving a piece of data to be stored;
• determining a dose of electromagnetic radiation according to the piece of data;
• irradiating at least part of a resistive element with said dose of electromagnetic radiation to change a resistance of the resistive element from a first resistance to a second resistance, wherein the second resistance is lower than the first resistance, and a difference between the first resistance and the second resistance is dependent on said number.

A method of reading data, the method comprising:

• measuring a resistance or change in resistance of a resistive element;
• and
• ascertaining a piece of data according to the measurement.

A method, circuit, or system substantially as hereinbefore described with reference to the accompanying drawings.