Method of increasing mems enclosure pressure using outgassing material

A method of forming a plurality of microelectromechanical system (MEMS)-based sensors having individually set enclosure pressures, comprising:

• providing a wafer having transistor circuits thereon, the wafer having a first dielectric layer disposed above a patterned top-level metal layer, and further having a second dielectric layer disposed over the first dielectric layer, the second dielectric layer having a thickness and a top surface;
• etching a hole in a second dielectric layer, the etching exposing a portion of a surface of the first dielectric layer;
• depositing a blanket layer of high density plasma (HDP) oxide over the second dielectric layer and the hole;
• polishing the blanket layer of HDP oxide wherein the second dielectric layer is a polish-stop layer;
• forming a first MEMS structure including the hole filled with HDP oxide, and a second MEMS structure excluding the hole filled with HDP oxide;
• and
• eutectically bonding a handle wafer to the first wafer at a temperature high enough to cause the HDP oxide to outgas.