MEMS Devices and Fabrication Methods Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Hua Chu, Chun-Wen Cheng, Te-Hao Lee, Chung-Hsien Lin
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Abstract
A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.
Claims20
A semiconductor device comprising:
- a carrier having a plurality of cavities;
- a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises:
- a shielding layer on the carrier and coupled to ground;
- a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate;
- and
- a moving element over the bottom electrode;
- and
- a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.
An apparatus comprising:
- a carrier having a plurality of cavities, wherein a first opening of a first cavity is covered by a bonding interface layer and a second opening of the first cavity is exposed through a gap between two adjacent bonding interface layers;
- a micro-electro-mechanical system (MEMS) device bonded on the carrier, wherein the MEMS device comprises:
- the bonding interface layer on a first side of the MEMS device, wherein the bonding interface layer is configured to be a shielding layer;
- a dielectric layer on the bonding interface layer;
- a bottom electrode over the dielectric layer;
- a plurality of vias coupled between the bonding interface layer and the bottom electrode of the MEMS device;
- a first moving element over the bottom electrode;
- and
- a semiconductor substrate bonded on the MEMS device, wherein the semiconductor substrate comprises a top electrode, and wherein the first moving element is between the bottom electrode and the top electrode.
A method comprising:
- providing a micro-electro-mechanical system (MEMS) substrate including:
- forming a first sacrificial dielectric layer having a plurality of sealed trenches on a first side of the MEMS substrate;
- forming a plurality of electrodes and mechanical bumps on the first sacrificial dielectric layer;
- depositing a vapor HF stop layer on the first sacrificial dielectric layer;
- depositing a second sacrificial dielectric layer on a second side of the MEMS substrate;
- forming an air opening in the second sacrificial dielectric layer;
- and
- forming a bonding layer over the first side of the MEMS substrate, wherein the bonding layer is coupled to ground and a plurality of vias are coupled between the bonding layer and the plurality of electrodes;
- providing a carrier including a plurality of cavities;
- bonding the first side of the MEMS substrate on the carrier;
- applying a sacrificial layer removal process to the MEMS substrate;
- and
- bonding a semiconductor substrate on the second side of the MEMS substrate.
Dependencies are inferred from the claim text.