# US 2016/0365293 A1 · Method for evaluating semiconductor substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0365293 A1 - Document ID: US20160365293A1 - Status: Published application - Kind: A1 - Application number: 15/117,537 - Filed: 2015-02-23 - Published: 2016-12-15 - Earliest claimed: 2014-03-17 - Assignees: Shin-Etsu Handotai Co., Ltd. - Applicants: Shin-Etsu Handotai Co., Ltd. - Inventors: Tsuyoshi OHTSUKI; Hiroshi TAKENO - Web page: https://patentgrep.com/patent/US20160365293A1 ## CPC - H10P 74/235: {comprising optical enhancement of defects or not-directly-visible states} - G01N 23/2254: Measuring cathodoluminescence - H10P 30/204: {into Group IV semiconductors} - H10P 30/21: {of electrically active species} - H10P 30/28: characterised by an annealing step, e.g. for activation of dopants - H10P 34/422: {using incoherent radiation} - H10P 36/00: Gettering within semiconductor bodies - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 95/90: Thermal treatments, e.g. annealing or sintering - G01N 2223/3106: heating, furnaces - G01N 2223/6116: semiconductor wafer - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract The present invention provides a method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing is performed as the defect recovery heat treatment, and the method includes steps of measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. Consequently, the method for evaluating a semiconductor substrate which enables evaluating a recovery process of the crystal defect is provided. ## Claims ### Claim at position 1 -8. (canceled) ### Claim 9 A method for evaluating a semiconductor substrate subjected to a defect recovery heat treatment to recover a crystal defect in the semiconductor substrate having the crystal defect, flash lamp annealing being performed as the defect recovery heat treatment, the method comprising steps of: measuring the crystal defect in the semiconductor substrate, which is being recovered, by controlling treatment conditions for the flash lamp annealing; and analyzing a recovery mechanism of the crystal defect on the basis of a result of the measurement. ### Claim 10 (depends on 9) The method for evaluating a semiconductor substrate according to claim 9, wherein, at the step of performing the measurement, a measurement is further performed after recovery of the crystal defect. ### Claim 11 (depends on 9) The method for evaluating a semiconductor substrate according to claim 9, wherein the treatment condition for the flash lamp annealing to be changed is a heat treatment time or irradiation energy. ### Claim 12 (depends on 10) The method for evaluating a semiconductor substrate according to claim 10, wherein the treatment condition for the flash lamp annealing to be changed is a heat treatment time or irradiation energy. ### Claim 13 (depends on 9) The method for evaluating a semiconductor substrate according to claim 9, wherein the crystal defect is an ion implantation defect produced by implanting ions into the semiconductor substrate. ### Claim 14 (depends on 10) The method for evaluating a semiconductor substrate according to claim 10, wherein the crystal defect is an ion implantation defect produced by implanting ions into the semiconductor substrate. ### Claim 15 (depends on 11) The method for evaluating a semiconductor substrate according to claim 11, wherein the crystal defect is an ion implantation defect produced by implanting ions into the semiconductor substrate. ### Claim 16 (depends on 12) The method for evaluating a semiconductor substrate according to claim 12, wherein the crystal defect is an ion implantation defect produced by implanting ions into the semiconductor substrate. ### Claim 17 (depends on 10) The method for evaluating a semiconductor substrate according to claim 10, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 18 (depends on 11) The method for evaluating a semiconductor substrate according to claim 11, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 19 (depends on 12) The method for evaluating a semiconductor substrate according to claim 12, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 20 (depends on 13) The method for evaluating a semiconductor substrate according to claim 13, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 21 (depends on 14) The method for evaluating a semiconductor substrate according to claim 14, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 22 (depends on 15) The method for evaluating a semiconductor substrate according to claim 15, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 23 (depends on 16) The method for evaluating a semiconductor substrate according to claim 16, wherein, at the step of performing the measurement, a state before an emission line produced due to the crystal defect provided by a luminescence method is annihilated is measured at least once, and also a state after the emission line is annihilated is measured. ### Claim 24 (depends on 17) The method for evaluating a semiconductor substrate according to claim 17, wherein the luminescence method is a cathode luminescence method. ### Claim 25 (depends on 17) The method for evaluating a semiconductor substrate according to claim 17, wherein, at the step of performing the analysis, the recovery mechanism is analyzed by observing a change in intensity of the emission line. ### Claim 26 (depends on 9) The method for evaluating a semiconductor substrate according to claim 9, wherein the semiconductor substrate is a silicon semiconductor substrate.