# US 2016/0355440 A1 · Polycrystalline diamond compacts > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0355440 A1 - Document ID: US20160355440A1 - Status: Published application - Kind: A1 - Application number: 15/238,475 - Filed: 2016-08-16 - Published: 2016-12-08 - Earliest claimed: 2008-10-03 - Assignees: US Synthetic Corporation - Applicants: US Synthetic Corporation - Inventors: Kenneth E. Bertagnolli; Jiang Qian; Jason Wiggins; Michael Vail; Debkumar Mukhopadhyay - Web page: https://patentgrep.com/patent/US20160355440A1 ## CPC - C04B 37/001: {directly with other burned ceramic articles} - B21C 3/025: {comprising diamond parts} - B24D 18/0009: {using moulds or presses} - C22C 26/00: Alloys containing diamond {or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes} - E21B 10/567: with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts - E21B 23/0419: {using down-hole motor and pump arrangements for generating hydraulic pressure} - F16C 33/043: {Sliding surface consisting mainly of ceramics, cermets or hard carbon, e.g. diamond like carbon [DLC]} - F16C 33/26: made from wire coils; made from a number of discs, rings, rods, or other members - G01N 27/72: by investigating magnetic variables - G01N 27/80: for investigating mechanical hardness, e.g. by investigating saturation or remanence of ferromagnetic material - C04B 2237/36: Non-oxidic - C04B 2237/363: Carbon - F16C 17/02: for radial load only - F16C 17/04: for axial load only - F16C 2206/04: Diamond like carbon [DLC] - F16C 2206/82: based on tungsten carbide [WC] - F16C 2220/20: by sintering pulverised material, e.g. powder metallurgy - F16C 2240/40: Linear dimensions, e.g. length, radius, thickness, gap - F16C 2240/48: Particle sizes - F16C 2352/00: Apparatus for drilling - Y10T 428/24058: including grain, strips, or filamentary elements in respective layers or components in angular relation - Y10T 428/24997: Of metal-containing material - Y10T 428/25: Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles - Y10T 428/252: Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.] - Y10T 428/30: Self-sustaining carbon mass or layer with impregnant or other layer - C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE - B21C: MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL - B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11) - C22C: ALLOYS (treatment of alloys C21D, C22F) - E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS - F16C: SHAFTS; FLEXIBLE SHAFTS; ELEMENTS OR CRANKSHAFT MECHANISMS; ROTARY BODIES OTHER THAN GEARING ELEMENTS; BEARINGS - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract Embodiments of the invention relate to polycrystalline diamond (“PCD”) exhibiting enhanced diamond-to-diamond bonding. In an embodiment, PCD includes a plurality of diamond grains defining a plurality of interstitial regions. A metal-solvent catalyst occupies at least a portion of the plurality of interstitial regions. The plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) or more and a specific magnetic saturation of about 15 Gauss·cm3/grams (“G·cm3/g”) or less. Other embodiments are directed to polycrystalline diamond compacts (“PDCs”) employing such PCD, methods of forming PCD and PDCs, and various applications for such PCD and PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies. ## Claims ### Claim 1 A polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface, at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 10 μm to about 18 μm; a metal-solvent catalyst occupying at least a portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least a portion of the polycrystalline diamond table in an amount of about 3 weight % to about 7.5 weight %; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to about 175 Oe; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm3/grams (“G·cm3/g”) to about 15 G·cm3/g; and a substrate bonded to the interfacial surface of the polycrystalline diamond table. ### Claim 2 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region. ### Claim 3 (depends on 2) The polycrystalline diamond compact of claim 2 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe. ### Claim 4 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to about 175 Oe. ### Claim 5 (depends on 3) The polycrystalline diamond compact of claim 3 wherein the plurality of diamond grains and the metal-solvent catalyst of the at least an unleached portion of the polycrystalline diamond table collectively exhibit a specific permeability of about 0.060 to about 0.090 G·cm3/g·Oe. ### Claim 6 (depends on 5) The polycrystalline diamond compact of claim 5 wherein the polycrystalline diamond table exhibits a Gratio of at least about 30.0×106. ### Claim 7 (depends on 6) The polycrystalline diamond compact of claim 6 wherein the polycrystalline diamond table, when unleached, exhibits a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m. ### Claim 8 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 15 μm to about 18 μm. ### Claim 9 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the amount of the metal-solvent catalyst is about 3 weight % to about 6 weight %. ### Claim 10 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide. ### Claim 11 (depends on 1) The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa. ### Claim 12 A polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface; the polycrystalline diamond table, when unleached, exhibiting a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m; at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 30 μm or less; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to about 175 Oe; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm3/grams (“G·cm3/g”) to about 15 G·cm3/g; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific permeability of about 0.060 G·cm3/g·Oe to about 0.090 G·cm3/g·Oe; and a substrate bonded to the interfacial surface of the polycrystalline diamond table. ### Claim 13 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region. ### Claim 14 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 155 Oe to about 175 Oe. ### Claim 15 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe. ### Claim 16 (depends on 15) The polycrystalline diamond compact of claim 15 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 10 μm to about 18 μm. ### Claim 17 (depends on 16) The polycrystalline diamond compact of claim 16 wherein the polycrystalline diamond table exhibits a Gratio of at least about 30.0×106. ### Claim 18 (depends on 16) The polycrystalline diamond compact of claim 16 wherein the distance cut prior to failure of the polycrystalline diamond table is about 1300 m to about 3950 m. ### Claim 19 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the at least an unleached portion of the polycrystalline diamond table includes a metal-solvent catalyst occupying at least an unleached portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least an unleached portion of the polycrystalline diamond table in an amount of about 3 weight % to about 7.5 weight %. ### Claim 20 (depends on 19) The polycrystalline diamond compact of claim 19 wherein the amount of the metal-solvent catalyst is about 3 weight % to about 6 weight %. ### Claim 21 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide. ### Claim 22 (depends on 12) The polycrystalline diamond compact of claim 12 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa. ### Claim 23 A polycrystalline diamond compact, comprising: a polycrystalline diamond table including an upper exterior surface spaced from an interfacial surface; the polycrystalline diamond table exhibiting a thermal stability, as determined by a distance cut, prior to failure, in a vertical lathe test of at least about 1300 m; at least an unleached portion of the polycrystalline diamond table including: a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween and defining a plurality of interstitial regions, the plurality of diamond grains exhibits an average grain size of about 10 μm to about 18 μm; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a coercivity of about 115 Oersteds (“Oe”) to about 175 Oe; and wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific magnetic saturation of about 10 Gauss·cm3/grams (“G·cm3/g”) to about 15 G·cm3/g; wherein the plurality of diamond grains and the metal-solvent catalyst collectively exhibit a specific permeability of about 0.060 G·cm3/g·Oe to about 0.090 G·cm3/g·Oe; and a substrate bonded to the interfacial surface of the polycrystalline diamond table. ### Claim 24 (depends on 23) The polycrystalline diamond compact of claim 23 wherein the polycrystalline diamond table includes a leached region, and wherein the at least an unleached portion of the polycrystalline diamond table is disposed between the substrate and the leached region. ### Claim 25 (depends on 23) The polycrystalline diamond compact of claim 23 wherein the coercivity of the at least an unleached portion of the polycrystalline diamond table is about 130 Oe to about 160 Oe. ### Claim 26 (depends on 25) The polycrystalline diamond compact of claim 25 wherein the plurality of diamond grains of the at least an unleached portion of the polycrystalline diamond table exhibits an average grain size of about 15 μm to about 18 μm. ### Claim 27 (depends on 26) The polycrystalline diamond compact of claim 26 wherein the at least an unleached portion of the polycrystalline diamond table includes a metal-solvent catalyst occupying at least an unleached portion of the plurality of interstitial regions, the metal-solvent catalyst is present in the at least an unleached portion of the polycrystalline diamond table in an amount of about 3 weight % to about 7.5 weight %. ### Claim 28 (depends on 27) The polycrystalline diamond compact of claim 27 wherein the distance cut prior to failure of the polycrystalline diamond table is about 1300 m to about 3950 m. ### Claim 29 (depends on 23) The polycrystalline diamond compact of claim 23 wherein the polycrystalline diamond table is formed in a high-pressure/high-temperature process at a cell pressure of at least 7.5 GPa. ### Claim 30 (depends on 23) The polycrystalline diamond compact of claim 23 wherein the substrate includes at least one of tungsten carbide, titanium carbide, chromium carbide, niobium carbide, tantalum carbide, or vanadium carbide.