# US 2016/0355392 A1 · Planar cavity mems and related structures, methods of manufacture and design structures

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- Number: US 2016/0355392 A1
- Document ID: US20160355392A1
- Status: Published application
- Kind: A1
- Application number: 15/238,854
- Filed: 2016-08-17
- Published: 2016-12-08
- Earliest claimed: 2010-06-25
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Anthony K. Stamper; John G. Twombly
- Web page: https://patentgrep.com/patent/US20160355392A1

## CPC

- B81C 1/00666: {Treatments for controlling internal stress or strain in MEMS structures}
- B81C 1/0015: {Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244)}
- B81C 1/00365: {having low tensile stress between layers}
- B81C 1/00476: {removing a sacrificial layer (B81C1/00912 takes precedence)}
- B81C 1/00619: {Forming high aspect ratio structures having deep steep walls}
- B81C 1/00626: {Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619}
- G06F 30/39: Circuit design at the physical level (physical level design for reconfigurable circuits G06F30/347)
- H01H 1/0036: {Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009)}
- H01H 57/00: Electrostrictive relays; Piezoelectric relays
- H10N 30/306: {Cantilevers}
- B81B 2201/014: having a cantilever fixed on one side connected to one or more dimples
- B81B 2203/0118: Cantilevers
- B81B 2203/04: Electrodes
- B81C 2201/0109: Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
- B81C 2201/013: Etching
- B81C 2201/0167: by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
- B81C 2201/017: Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
- B81C 2203/0136: Growing or depositing of a covering layer
- B81C 2203/0172: Seals
- G06F 2115/04: Micro electro-mechanical systems [MEMS]
- H01H 2057/006: {Micromechanical piezoelectric relay}
- Y10S 438/937: Hillock prevention
- Y10T 29/42: Piezoelectric device making
- Y10T 29/435: Solid dielectric type
- Y10T 29/49002: Electrical device making
- Y10T 29/49105: Switch making
- Y10T 29/49121: Beam lead frame or beam lead device
- Y10T 29/49126: Assembling bases
- Y10T 29/4913: Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T 29/49155: Manufacturing circuit on or in base
- Y10T 29/5313: Means to assemble electrical device
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H01H: ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES (contact cables H01B7/10; electrolytic self-interrupters H01G9/18; emergency protective circuit arrangements H02H; switching by electronic means without contact-making H03K17/00)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

## Claims

### Claim 1

A method in a computer-aided design system for generating a functional design model of a MEMS, the method comprising:
generating a functional representation of a wiring layer to form at least one fixed plate;
generating a functional representation of an insulator layer over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of aluminum silicide during a subsequent sacrificial material deposition step;
generating a functional representation of at least one upper MEMS beam over the at least one fixed plate; and
generating a functional representation of venting or stripping of the sacrificial material to form at least a lower cavity,
wherein the generating a functional representation of an insulator layer over the at least one fixed plate comprises a functional representation of a conformal oxidization barrier layer comprising at least one of Al2O3 and Ta2O5.

### Claim 2 (depends on 1)

The method of claim 1, wherein the at least one fixed plate is a patterned wiring layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the insulating layer has a tapered profile.

### Claim 4 (depends on 3)

The method of claim 3, wherein the tapered profile is tapered to a 45 degree angle.

### Claim 5 (depends on 1)

The method of claim 1, wherein the insulating layer has a double tapered profile.

### Claim 6 (depends on 1)

The method of claim 1, wherein the conformal oxidation barrier layer comprises a combination of Al2O3 and Ta2O5.

### Claim 7 (depends on 1)

The method of claim 1, wherein the at least one fixed plate contains aluminum.

### Claim 8 (depends on 1)

The method of claim 1, wherein the insulator layer also covers sidewall surfaces of the at least one fixed plate.

### Claim 9 (depends on 1)

The method of claim 1, further comprising generating a functional representation of a TiN/TiAl3 layer between the at least one fixed plate and the insulator layer.

### Claim 10 (depends on 1)

The method of claim 1, wherein the insulator layer over the at least one fixed plate acts to block reaction, alloying, or interdiffusion of material of the at least one fixed plate and the sacrificial material.

### Claim 11 (depends on 1)

The method of claim 1, wherein the sacrificial material comprises silicon.