Eliminating emissive sub-bandgap states in nanocrystals
AssigneeMassachusetts Institute of Technology
InventorsGyuweon Hwang, Donghun Kim, Jose M. Cordero, Mark W. B. Wilson, Chia-Hao M. Chuang, Jeffrey C. Grossman, Moungi G. Bawendi
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Abstract
The size-dependent band-gap tunability and solution processability of nanocrystals (NCs) make them attractive candidates for optoelectronic applications. One factor that presently limits the device performance of NC thin films is sub-bandgap states, also referred to as trap states. Trap states can be controlled by surface treatment of the nanocrystals.
Claims16
A method of modifying a surface of an MX nanocrystal comprising contacting a surface of the nanocrystal with an oxidizing agent.
A method of treating a film that includes an MX nanocrystal comprising contacting a surface of the nanocrystal with an oxidizing agent.
A lead sulfide nanocrystal comprising a nanocrystal having an oxidized surface such that the density of trap states for the nanocrystal having the oxidized surface to the nanocrystal having an untreated surface is reduced by at least 20-fold.
Dependencies are inferred from the claim text.