Apparatus for producing sic epitaxial wafer and method for producing sic epitaxial wafer
AssigneeShowa Denko K.K.
InventorsJun NORIMATSU, Akira MIYASAKA, Yoshiaki KAGESHIMA
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Abstract
The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.
Claims12
A SiC epitaxial wafer-producing apparatus that grows a SiC epitaxial film on a main surface of a SiC substrate using a chemical vapor deposition method, comprising:
- a mounting plate that has a concave accommodation portion;
- a satellite that is provided in the concave accommodation portion and has an upper surface on which the SiC substrate is placed;
- and
- a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.
A SiC epitaxial wafer-producing apparatus that grows a SiC epitaxial film on a main surface of a SiC substrate using a chemical vapor deposition method, comprising:
- a mounting plate that has a concave accommodation portion;
- and
- a satellite that is provided in the concave accommodation portion and has an upper surface on which the SiC substrate is placed,
- wherein the satellite includes a carbon base which is covered with a non-carbon material and a portion which is provided at a position that does not come into contact with the SiC substrate placed on the satellite and through which the carbon base is exposed.
A SiC epitaxial wafer-producing apparatus that grows a SiC epitaxial film on a main surface of a SiC substrate using a chemical vapor deposition method, comprising:
- a mounting plate that has a concave accommodation portion;
- a satellite that is provided in the concave accommodation portion and has an upper surface on which the SiC substrate is placed;
- a raw material gas introduction pipe that is used to supply a raw material gas for the SiC epitaxial film onto the main surface of the SiC substrate placed on the satellite;
- and
- a carbon member that is provided on an upstream side of the flow of the raw material gas between a gas inlet of the raw material gas introduction pipe and the satellite.
A SiC epitaxial wafer-producing apparatus that grows a SiC epitaxial film on a main surface of a SiC substrate using a chemical vapor deposition method, comprising:
- a mounting plate that has a concave accommodation portion;
- a satellite that is provided in the concave accommodation portion and has an upper surface on which the SiC substrate is placed;
- and
- a substrate-holding ring that has an opening portion having substantially the same size as the SiC substrate, is provided so as to surround a side surface of the SiC substrate, and is made of a carbon material.
Dependencies are inferred from the claim text.