Electrostatic discharge protection device
AssigneeSofics BVBA
InventorsBart Sorgeloos, Benjamin Van Camp, Sven Van Wijmeersch, Wim Vanhouteghem
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Abstract
An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.
Claims20
An electrostatic discharge (ESD) protection device coupled between a first node and a second node, the ESD protection device comprising:
- a first region that is lowly doped with a P-type dopant;
- a second region that is lowly doped with an N-type dopant and formed directly within the first region;
- a third region that is highly doped with the P-type dopant and formed directly within the second region, wherein the third region is coupled to the first node;
- a fourth region that is lowly doped with the N-type dopant and formed directly within the first region;
- and
- a fifth region that is doped with the P-type dopant and formed directly within the fourth region, wherein the fifth region is coupled to the second node;
- wherein a voltage at the third region is higher than a voltage at the fifth region, and further wherein a junction between the second region and the first region is configured to enter into reverse breakdown in response to an ESD event, and a junction between the fourth region and the fifth region is configured to enter into a reverse breakdown in response to the ESD event, such that the ESD protection device is configured to sink current from the first node to the second node in response to the ESD event.
An electrostatic discharge (ESD) protection device coupled between a first node and a second node, the ESD protection device comprising:
- a first region that is lowly doped with an N-type dopant;
- a second region that is lowly doped with a P-type dopant and formed directly within the first region;
- a third region that is highly doped with the N-type dopant and formed directly within the second region, wherein the third region is coupled to the first node;
- a fourth region that is lowly doped with the P-type dopant and formed directly within the first region;
- and
- a fifth region that is doped with the N-type dopant and formed directly within the fourth region, wherein the fifth region is coupled to the second node;
- wherein a voltage at the third region is higher than a voltage at the fifth region, and further wherein a junction between the third region and the second region is configured to enter into reverse breakdown in response to an ESD event, and a junction between the first region and the fourth region is configured to enter into a reverse breakdown in response to the ESD event, such that the ESD protection device is configured to sink current from the first node to the second node in response to the ESD event.
An electrostatic discharge (ESD) protection device coupled between a first node and a second node, the ESD protection device comprising:
- a first PNP transistor including a first collector, a first emitter, and a first base;
- a second PNP transistor including a second collector, a second emitter, and a second base;
- and
- a first NPN transistor including a third collector, a third emitter, and a third base;
- wherein the second emitter is coupled to the first node, the first collector is coupled to the second node, the second base is coupled to the third collector, the second collector is coupled to the third base and the first emitter, and the third emitter is coupled to the first base;
- wherein a first lowly doped region is doped with a dopant of an N-type and functions as both the second base and the third collector, wherein a second lowly doped region is doped with a dopant of a P-type and functions as the second collector, the third base, and the first emitter, wherein a third lowly doped region is doped with a dopant of the N-type and functions as both the third emitter and the first base;
- and
- wherein the ESD protection device is configured to sink current from the first node to the second node in response to an ESD event.
An electrostatic discharge (ESD) protection device coupled between a first node and a second node, the ESD protection device comprising:
- a first NPN transistor including a first collector, a first emitter, and a first base;
- a second NPN transistor including a second collector, a second emitter, and a second base;
- and
- a first PNP transistor including a third collector, a third emitter, and a third base;
- wherein the first collector is coupled to the first node, the second emitter is coupled to the second node, the first base is coupled to the third emitter, the first emitter is coupled to the third base and the second collector, and the third collector is coupled to the second base;
- wherein a first lowly doped region is doped with a dopant of a P-type and functions as both the first base and the third emitter, wherein a second lowly doped region is doped with a dopant of an N-type and functions as the first emitter, the third base, and the second collector, wherein a third lowly doped region is doped with a dopant of the P-type and functions as both the third collector and the second base;
- and
- wherein the ESD protection device is configured to sink current from the first node to the second node in response to an ESD event.
Dependencies are inferred from the claim text.