# US 2016/0260808 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0260808 A1 - Document ID: US20160260808A1 - Status: Published application - Kind: A1 - Application number: 14/837,822 - Filed: 2015-08-27 - Published: 2016-09-08 - Earliest claimed: 2015-03-05 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Kenya Kobayashi - Web page: https://patentgrep.com/patent/US20160260808A1 ## CPC - H10D 64/111: {Field plates} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 62/102: {Constructional design considerations for preventing surface leakage or controlling electric field concentration} - H10D 62/115: {Dielectric isolations, e.g. air gaps} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/516: {the thicknesses being non-uniform} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a first electrode; a second electrode; a third electrode; a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and a first insulating film. The first insulating film is provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region. The first insulating film has a first insulating region and a second insulating region. A first width in the first insulating region is different from a second width in the second insulating region. The first insulating region and the second insulating region are arranged in the second direction. ## Claims ### Claim 1 A semiconductor device comprising: a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type and selectively provided on the first semiconductor region; a third semiconductor region of the first conductivity type and selectively provided on the second semiconductor region; a first electrode electrically connected to the first semiconductor region; a second electrode provided on the third semiconductor region, and the second electrode electrically being connected to the third semiconductor region; a third electrode extending in a second direction crossing a first direction from the first electrode toward the second electrode; a fourth electrode provided on the first electrode side of the third electrode, and the fourth electrode extending in the second direction; and a first insulating film provided between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, between the third electrode and the third semiconductor region, and between the fourth electrode and the first semiconductor region, having a first insulating region and a second insulating region provided between the fourth electrode and the first semiconductor region, a first width between the fourth electrode and the first semiconductor region in the first insulating region being different from a second width between the fourth electrode and the first semiconductor region in the second insulating region, and the first insulating region and the second insulating region being arranged in the second direction. ### Claim 2 (depends on 1) The device according to claim 1, wherein the first width in the first insulating region is larger than the second width in the second insulating region in a third direction crossing the first direction and the second direction. ### Claim 3 (depends on 1) The device according to claim 1, wherein the first insulating region and the second insulating region are alternately arranged in the second direction. ### Claim 4 (depends on 1) The device according to claim 1, wherein a length of the first insulating region is different from a length of the second insulating region in the second direction. ### Claim 5 (depends on 1) The device according to claim 1, wherein a length of the first insulating region is larger than a length of the second insulating region in the second direction. ### Claim 6 (depends on 1) The device according to claim 1, wherein a length of the first insulating region is equal to a length of the second insulating region in the second direction. ### Claim 7 (depends on 1) The device according to claim 1, wherein a film thickness of the second insulating region is equal to a film thickness of the first insulating film between the second semiconductor region and the third electrode. ### Claim 8 (depends on 1) The device according to claim 1, wherein a film thickness of the second insulating region is different from a film thickness of the first insulating film between the second semiconductor region and the third electrode. ### Claim 9 (depends on 1) The device according to claim 1, wherein a film thickness of the second insulating region is larger than a film thickness of the first insulating film between the second semiconductor region and the third electrode. ### Claim 10 (depends on 1) The device according to claim 1, wherein the first insulating region includes a first part and a second part between the fourth electrode and the first semiconductor region, and the first part and the second part are different in thickness from each other. ### Claim 11 (depends on 10) The device according to claim 10, wherein the first part and the second part are arranged in the first direction. ### Claim 12 (depends on 10) The device according to claim 10, wherein the first part and the second part are alternately arranged in the first direction. ### Claim 13 (depends on 1) The device according to claim 1, wherein the second insulating region includes a third part and a fourth part between the fourth electrode and the first semiconductor region, and the third part and the fourth part are different in thickness from each other. ### Claim 14 (depends on 13) The device according to claim 13, wherein the third part and the fourth part are arranged in the first direction. ### Claim 15 (depends on 13) The device according to claim 13, wherein the third part and the fourth part are alternately arranged in the first direction. ### Claim 16 (depends on 1) The device according to claim 1, wherein a carrier concentration in the first semiconductor region in contact with the first insulating region is equal to a carrier concentration in the first semiconductor region in contact with the second insulating region. ### Claim 17 (depends on 1) The device according to claim 1, wherein the third electrode is connected to the fourth electrode. ### Claim 18 (depends on 1) The device according to claim 1, wherein the third electrode is unconnected with the fourth electrode.