# US 2016/0260751 A1 · Semiconductor device, display device, and electronic device using the display device

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- Number: US 2016/0260751 A1
- Document ID: US20160260751A1
- Status: Published application
- Kind: A1
- Application number: 15/058,354
- Filed: 2016-03-02
- Published: 2016-09-08
- Earliest claimed: 2015-03-03
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Kenichi OKAZAKI; Masami JINTYOU; Takahiro IGUCHI; Yasuharu HOSAKA; Junichi KOEZUKA; Hiroyuki MIYAKE; Shunpei YAMAZAKI
- Web page: https://patentgrep.com/patent/US20160260751A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/136213: {Storage capacitors associated with the pixel electrode}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 1/692: {Electrodes}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 64/667: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers (having lateral variation H10D64/671)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- G02F 2201/40: Arrangements for improving the aperture ratio
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

Provided is a semiconductor device with high capacitance while the aperture ratio is increased or a semiconductor device whose manufacturing cost is low. The semiconductor device includes a transistor, a first insulating film, and a capacitor including a second insulating film between a pair of electrodes. The transistor includes a gate electrode, a gate insulating film in contact with the gate electrode, a first oxide semiconductor film overlapping with the gate electrode, and a source electrode and a drain electrode electrically connected to the first oxide semiconductor film. One of the pair of electrodes of the capacitor includes a second oxide semiconductor film. The first insulating film is over the first oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

## Claims

### Claim 1

A semiconductor device comprising:
a transistor;
a first insulating film; and
a capacitor, the capacitor including a second insulating film between a pair of electrodes,
wherein the transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
a first oxide semiconductor film over the gate insulating film, the first oxide semiconductor film being overlapped with the gate electrode; and
a source electrode and a drain electrode electrically connected to the first oxide semiconductor film,
wherein one of the pair of electrodes of the capacitor includes a second oxide semiconductor film,
wherein the first insulating film is over the first oxide semiconductor film, and
wherein the second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is between the first insulating film and the second insulating film.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising a first conductive film, wherein the other of the pair of electrodes of the capacitor includes the first conductive film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1,
wherein the transistor includes a third oxide semiconductor film overlapping with the first oxide semiconductor film, and
wherein the second oxide semiconductor film and the third oxide semiconductor film are formed from the same layer.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2,
wherein the transistor includes a second conductive film,
wherein the first insulating film, the second insulating film and the second conductive film each overlap with the first oxide semiconductor film, and
wherein the first conductive film and the second conductive film are formed from the same layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the capacitor transmits visible light.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1,
wherein each of the first oxide semiconductor film and the second oxide semiconductor film comprises In-M-Zn oxide, and
wherein M is any of Al, Ti, Ga, Y, Zr, La, Ce, Nd, Sn, and Hf.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1,
wherein the first insulating film contains oxygen, and
wherein the second insulating film contains hydrogen.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the first insulating film is in contact with the first oxide semiconductor film.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the second insulating film is in contact with the second oxide semiconductor film.

### Claim 10 (depends on 1)

A display device comprising:
the semiconductor device according to claim 1; and
a liquid crystal element.

### Claim 11 (depends on 1)

An electronic device comprising:
the semiconductor device according to claim 1; and
at least one of a switch, a speaker, a display portion and a housing.