# US 2016/0260686 A1 · Resin-encapsulated semiconductor device and method of manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0260686 A1 - Document ID: US20160260686A1 - Status: Published application - Kind: A1 - Application number: 15/053,267 - Filed: 2016-02-25 - Published: 2016-09-08 - Earliest claimed: 2015-03-05 - Assignees: Sii Semiconductor Corporation - Applicants: SII Semiconductor Corporation - Inventors: Noriyuki KIMURA - Web page: https://patentgrep.com/patent/US20160260686A1 ## CPC - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10P 72/74: {using temporarily an auxiliary support} - H10W 20/43: Layouts of interconnections - H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons - H10W 70/411: {Chip-supporting parts, e.g. die pads} - H10W 70/421: {Shapes or dispositions} - H10W 70/611: {for connecting multiple chips together} - H10W 70/614: {the multiple chips being integrally enclosed} - H10W 70/635: {Through-vias} - H10W 70/65: Shapes or dispositions of interconnections - H10W 74/014: {using batch processing} - H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)} - H10W 74/47: comprising organic materials, e.g. plastics or resins - H10W 90/00: Package configurations - H10W 90/811: {Multiple chips on leadframes} - H10P 72/7416: {used during dicing or grinding} - H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers} - H10W 72/0198: {batch processes} - H10W 72/072: {of bump connectors} - H10W 72/07204: {using temporary auxiliary members, e.g. sacrificial coatings} - H10W 72/07207: {Temporary substrates, e.g. removable substrates} - H10W 72/073: {of die-attach connectors} - H10W 72/07304: {the auxiliary member being temporary, e.g. a sacrificial coating} - H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate} - H10W 72/075: {of bond wires} - H10W 72/07504: {the auxiliary member being temporary, e.g. a sacrificial coating} - H10W 72/07507: {the auxiliary member being a temporary substrate, e.g. a removable substrate} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/354: {comprising polymers} - H10W 72/5473: {multiple bond wires connected to a common bond pad} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/726: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W 90/752: {between stacked chips} - H10W 90/753: {between laterally-adjacent chips} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A first resin encapsulated body (25) and a second resin encapsulated body (26) are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body (25) includes: a first semiconductor element (2); an external terminal (5); inner wiring (4); and a first resin (6) for covering those components, at least a rear surface of the external terminal (5), a rear surface of the semiconductor element (2), and a surface of the inner wiring (4) are exposed from the first resin (6). The second resin encapsulated body (26) includes: a second semiconductor element (7) having an electrode pad formed on a surface thereof; a second resin (8) for covering the second semiconductor element; and a metal body connected to the electrode pad, and is partly exposed from the second resin. The inner wiring and the metal body are electrically connected to each other. ## Claims ### Claim 1 A resin-encapsulated semiconductor device, comprising: a first resin-encapsulated body; and a second resin encapsulated body, the first resin encapsulated body comprising: a first semiconductor element; an external terminal spaced around the first semiconductor element; inner wiring for connecting the first semiconductor element and a surface of the external terminal to each other; and a first resin for covering the first semiconductor element, the external terminal, and the inner wiring, wherein a rear surface of the external terminal, a rear surface of the first semiconductor element, and a surface of the inner wiring are exposed from the first resin, the second resin encapsulated body comprising: a second semiconductor element; a second resin for covering the second semiconductor element; and a metal body that is connected to the second semiconductor element, and is partly exposed from the second resin, wherein a surface of the first resin encapsulated body on which the inner wiring is exposed and a surface of the second resin encapsulated body on which the metal body is exposed are formed so as to be in intimate contact with each other, and the inner wiring and the metal body are electrically connected to each other. ### Claim 2 (depends on 1) A resin-encapsulated semiconductor device according to claim 1, wherein the metal body comprises a bump electrode and the second semiconductor element is flip-chip connected to the inner wiring. ### Claim 3 (depends on 1) A resin-encapsulated semiconductor device according to claim 1, wherein the metal body comprises a metal wire and the second semiconductor element is connected to the inner wiring by wire bonding. ### Claim 4 (depends on 1) A resin-encapsulated semiconductor device according to claim 1, wherein composition of the first resin and composition of the second resin are different from each other. ### Claim 5 (depends on 1) A resin-encapsulated semiconductor device according to claim 1, wherein the first semiconductor element forming the first resin encapsulated body comprises a plurality of first semiconductor elements. ### Claim 6 (depends on 1) A resin-encapsulated semiconductor device according to claim 1, wherein the second semiconductor element forming the second resin encapsulated body comprises a plurality of second semiconductor elements. ### Claim 7 A resin-encapsulated semiconductor device, comprising: a first resin encapsulated body; and a second resin encapsulated body, the first resin encapsulated body comprising: a first semiconductor element; an external terminal spaced around the first semiconductor element; inner wiring for connecting the first semiconductor element and a surface of the external terminal to each other; and a first resin for covering the first semiconductor element, the external terminal, and the inner wiring, wherein a rear surface of the external terminal, a covering layer formed on a rear surface of the first semiconductor element, and a surface of the inner wiring are exposed from the first resin, the second resin encapsulated body comprising: a second semiconductor element; a second resin for covering the second semiconductor element; and a metal body that is connected to the second semiconductor element, and is partly exposed from the second resin, wherein a surface of the first resin encapsulated body on which the inner wiring is exposed and a surface of the second resin encapsulated body on which the metal body is exposed are formed so as to be in intimate contact with each other, and the inner wiring and the metal body are electrically connected to each other. ### Claim 8 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein the metal body comprises a bump electrode and the second semiconductor element is flip-chip connected to the inner wiring. ### Claim 9 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein the metal body comprises a metal wire and the second semiconductor element is connected to the inner wiring by wire bonding. ### Claim 10 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein composition of the first resin and composition of the second resin are different from each other. ### Claim 11 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein the first semiconductor element forming the first resin encapsulated body comprises a plurality of first semiconductor elements. ### Claim 12 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein the second semiconductor element forming the second resin encapsulated body comprises a plurality of second semiconductor elements. ### Claim 13 (depends on 7) A resin-encapsulated semiconductor device according to claim 7, wherein a material of the covering layer formed on the rear surface of the first semiconductor element comprises one of a single layer material of anyone of solder that is an alloy material, gold, silver, copper, aluminum, palladium, and nickel, and an epoxy resin that is an organic material, and a multilayer material comprising laminated layers of at least two materials thereof.