# US 2016/0260604 A1 · PREPARATION METHOD OF GRAPHENE NANORIBBON ON h-BN

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- Number: US 2016/0260604 A1
- Document ID: US20160260604A1
- Status: Published application
- Kind: A1
- Application number: 14/803,371
- Filed: 2015-07-20
- Published: 2016-09-08
- Earliest claimed: 2015-03-05
- Assignees: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Applicants: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
- Inventors: HAOMIN WANG; LI HE; LINGXIU CHEN; HONG XIE; HUISHAN WANG; SHUJIE TANG; LEI LI; DAOLI ZHANG; XIAOMING XIE; MIANHENG JIANG
- Web page: https://patentgrep.com/patent/US20160260604A1

## CPC

- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2908: {Nitrides}
- H10P 14/2925: {Surface structures}
- H10P 14/3452: {Microstructure}
- H10P 14/36: {characterised by treatments done before the formation of the materials}
- C01B 2204/06: Graphene nanoribbons
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}

## Abstract

A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.

## Claims

### Claim 1

A preparation method of a graphene nanoribbon on h-BN, comprising steps of:
forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method.;
growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method;
wherein the metal catalysis etching method in step 1) comprises steps of:
1-1) forming a metal particle thin film with a catalysis etching effect on the h-BN;
1-2) performing anneal etching on the h-BN with the metal particle thin film, to obtain the h-BN groove template with the nano ribbon-shaped groove structure.

### Claim 2 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: in step 1), the h-BN comprises one of an h-BN single crystal bulk, an h-BN thin film cleaved by a mechanical cleavage, and an h-BN thin film obtained by a chemical vapor deposition method.

### Claim 3 (depends on 2)

The preparation method of a graphene nanoribbon on h-BN according to claim 2, characterized in that: the h-BN is an h-BN thin film with a cleavage plane of atomic-level flatness obtained by the mechanical cleavage method.

### Claim 4

(canceled)

### Claim 5 (depends on 4)

The preparation method of a graphene nanoribbon on h-BN according to claim 4, characterized in that: in step 1-1), a metal salt solution, which has a catalysis etching effect on the h-BN, comprising one of Zn(NO3)2, Cu(NO3)2, NiCl2, FeCl2, FeCl3, CuSO4, MgCl2 or a combination thereof, is formed on the h-BN surface by a spin coating process.

### Claim 6 (depends on 5)

The preparation method of a graphene nanoribbon on h-BN according to claim 5, characterized in that: density and distribution of the etched nano ribbon-shaped groove structure are controlled by controlling a concentration of metal catalysis particle solution, where the concentration of metal catalysis particle is 5.29*10-3 mol/L˜5.29*10-1 mol/L, density of the etched nanoribbon is controlled by changing the concentration of metal catalysis particle solution.

### Claim 7 (depends on 4)

The preparation method of a graphene nanoribbon on h-BN according to claim 4, characterized in that: the anneal etching in step 1-2) is to perform a anneal etching on the h-BN in a CVD tube furnace, with a carrier gas of Ar, and a working gas of H2 or O2 according to different etching orientation;
wherein, it is available to obtain a nano ribbon-shaped groove structure with an Armchair boundary structure when the H2 and Ar features a flow rate of 1:1˜1:10, and it is available to obtain a nano ribbon-shaped groove structure with a Zigzag edge structure when the O2 and Ar features a flow rate of 1:1˜0:10.

### Claim 8 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that a temperature range of the anneal etching is 900?˜1300?, and an etching rate of the h-BN is controlled by controlling the temperature of the anneal etching.

### Claim 9 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: a time range of the anneal etching is 10 min˜300 min, and a depth, width and length of the nano ribbon-shaped groove structure is controlled by a time control of the anneal etching.

### Claim 10 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: the nano ribbon-shaped groove structure features a depth of a thickness of 1˜9 atomic layers, a width less than or equal to 1?m, and a length larger than or equal to 100 nm.

### Claim 11 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: the chemical vapor deposition method in step 2) comprises one of a low pressure chemical vapor deposition method LPCVD, a plasma enhanced chemical vapor deposition PECVD, an ordinary pressure chemical vapor deposition CVD and a pulsed laser deposition PLD.

### Claim 12 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: a carbon source for growing the graphene nanoribbon in step 2) comprises a solid-state carbon source, a gaseous carbon source and a liquid-state carbon source, wherein, the solid-state carbon source comprises one of a graphite, a glucose and a polymethacrylate or a combination thereof, the liquid-state carbon source comprises a liquid benzene, the gaseous carbon source comprises one of a methane, an ethene and an acetylene or a combination thereof.

### Claim 13 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: the carbon source for growing the graphene nanoribbon in step 2) is the acetylene and methane, wherein a gas flow ratio of the acetylene and the methane is 1:1˜1:30.

### Claim 14 (depends on 13)

The preparation method of a graphene nanoribbon on h-BN according to claim 13, characterized in that: when growing the graphene nanoribbon, a step of adjusting a partial pressure ratio of the carbon source gas by introducing a silane is included to control a suitable growth. rate, wherein, a gas volume range of the methane, silane and acetylene is 1:1:10˜1:1:20.

### Claim 15 (depends on 1)

The preparation method of a graphene nanoribbon on h-BN according to claim 1, characterized in that: an air pressure range for growing the graphene nanoribbon is 1 Pa˜10 Pa, a temperature range therefore is 800?˜1300?, and a growth time range therefore is 1 min˜1 Hour.

### Claim 16 (depends on 1)

The preparation method of a graphene nanoribbon on h--BN according to claim 1, characterized in that: the obtained graphene nanoribbon in step 2) features a width less than or equal to 1?m, a depth of a thickness of 1˜9 atomic layers, and a length larger than or equal to 100 nm