# US 2016/0260591 A1 · Sputtering target and method of producing sputtering target

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- Number: US 2016/0260591 A1
- Document ID: US20160260591A1
- Status: Published application
- Kind: A1
- Application number: 15/032,176
- Filed: 2015-04-16
- Published: 2016-09-08
- Earliest claimed: 2014-04-17
- Assignees: Mitsubishi Materials Corporation
- Applicants: Mitsubishi Materials Corporation
- Inventors: Shoubin Zhang
- Web page: https://patentgrep.com/patent/US20160260591A1

## CPC

- H01J 37/3429: {Plural materials}
- B22F 3/02: Compacting only
- C04B 35/58085: {based on silicides}
- C04B 35/62605: {Treating the starting powders individually or as mixtures}
- C04B 35/645: Pressure sintering
- C04B 35/6455: {Hot isostatic pressing}
- C23C 4/067: containing free particles of non-metal elements, e.g. carbon, silicon, boron, phosphorus or arsenic
- C23C 4/123: Spraying molten metal
- C23C 14/14: Metallic material, boron or silicon
- C23C 14/185: {by cathodic sputtering}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H01J 37/3426: {Material}
- H01J 37/3491: {Manufacturing of targets}
- B22F 2301/052: Aluminium
- B22F 2301/15: Nickel or cobalt
- B22F 2302/45: Others, including non-metals
- C04B 2235/3217: Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B 2235/3279: Nickel oxides, nickalates, or oxide-forming salts thereof
- C04B 2235/402: Aluminium
- C04B 2235/405: Iron group metals
- C04B 2235/421: Boron
- C04B 2235/5436: micrometer sized, i.e. from 1 to 100 micron
- C04B 2235/6562: Heating rate
- C04B 2235/72: Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B 2235/727: Phosphorus or phosphorus compound content
- C04B 2235/77: Density
- C04B 2235/96: Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A sputtering target of the present invention is a sintered body containing: 0.5 at % to 10 at % of at least one metal element selected from Ni and Al; 0.01 ppm by weight to 10000 ppm by weight of B or P; and a balance including Si and inevitable impurities, in which the sintered body has a volume resistivity of 10 Ω·cm or lower, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N/mm2 or higher.

## Claims

### Claim 1

A sputtering target which is a sintered body, comprising:
0.5 at % to 10 at % of at least one metal element selected from Ni and Al;
0.01 ppm by weight to 10000 ppm by weight of B or P; and
a balance including Si and inevitable impurities,
wherein the sintered body has a volume resistivity of 10 Ω·cm or lower, a theoretical density ratio of 85% to 99%, and a bending strength of 65 N/mm2 or higher.

### Claim 2

A method of producing a sputtering target, the method comprising:
mixing Si powder containing B or P and having an average particle size of 150 μm or less with powder containing at least one metal element selected from Ni and Al or silicide powder containing the at least one metal element to obtain a mixed powder such that a total amount of Ni and Al is 0.5 at % to 10 at % and an amount of B or P is 0.01 ppm by weight to 10000 ppm by weight; and
sintering the mixed powder through pressing.

### Claim 3

A method of producing a sputtering target, the method comprising:
mixing Si powder having an average particle size of 150 μm or less and B powder or P powder, with powder containing at least one metal element selected from Ni and Al or silicide powder containing the at least one metal element to obtain a mixed powder such that a total amount of Ni and Al is 0.5 at % to 10 at % and an amount of B or P is 0.01 ppm by weight to 10000 ppm by weight; and
sintering the mixed powder through pressing.

### Claim 4

A method of producing a sputtering target, the method comprising:
mixing Si powder containing B or P and having an average particle size of 150 μm or less with powder containing at least one metal element selected from Ni and Al or silicide powder containing the at least one metal element to obtain a mixed powder such that a total amount of Ni and Al is 0.5 at % to 10 at % and an amount of B or P is 0.01 ppm by weight to 10000 ppm by weight; and
sintering the mixed powder through thermal spraying.

### Claim 5

A method of producing a sputtering target, the method comprising:
mixing Si powder having an average particle size of 150 μm or less, and B powder or P powder with powder containing at least one metal element selected from Ni and Al or silicide powder containing the at least one metal element to obtain a mixed powder such that a total amount of Ni and Al is 0.5 at % to 10 at % and an amount of B or P is 0.1 ppm by weight to 20000 ppm by weight; and
sintering the mixed powder through thermal spraying.