# US 2016/0260451 A1 · Laminating magnetic cores for on-chip magnetic devices

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- Number: US 2016/0260451 A1
- Document ID: US20160260451A1
- Status: Published application
- Kind: A1
- Application number: 15/149,727
- Filed: 2016-05-09
- Published: 2016-09-08
- Earliest claimed: 2013-02-06
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Robert E. Fontana, JR.; William J. Gallagher; Philipp Herget; Eugene J. O'Sullivan; Lubomyr T. Romankiw; Naigang Wang; Bucknell C. Webb
- Web page: https://patentgrep.com/patent/US20160260451A1

## CPC

- C25D 5/10: Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10)
- C25D 3/54: of metals not provided for in groups C25D3/04 - C25D3/50
- C25D 5/14: two or more layers being of nickel or chromium, e.g. duplex or triplex layers
- C25D 7/001: {Magnets}
- C25D 7/123: {Semiconductors first coated with a seed layer or a conductive layer}
- C25D 9/08: by cathodic processes
- C25D 9/10: on iron or steel
- C25D 17/001: {Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells}
- G11B 5/676: {having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer}
- H01F 3/02: made from sheets
- H01F 10/3231: {via a non-magnetic spacer}
- H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]}
- H01F 41/02: for manufacturing cores, coils, or magnets (H01F41/14 takes precedence; for dynamo-electric machines H02K15/00)
- C25D 3/58: containing more than 50% by weight of copper
- C25D 5/18: Electroplating using modulated, pulsed or reversing current
- C25D 5/50: by heat-treatment
- H01F 10/3236: {made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy (H01F10/3286 takes precedence)}
- H01F 10/324: {Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer}
- H01F 10/325: {the spacer being noble metal}
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)
- H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES

## Abstract

A laminating structure includes a first magnetic layer, a second magnetic layer, a first spacer disposed between the first and second magnetic layers and a second spacer disposed on the second magnetic layer.

## Claims

### Claim 1

An on-chip magnetic device consisting of:
a first magnetic unit consisting of first and second magnetic layers and a non-magnetic spacer layer therebetween, wherein the non-magnetic spacer layer has a thickness of 5 to 20 nanometers and is selected from the group consisting of copper, molydenum, zinc, rubidium, gold, silver, selenium, tellurium, sulfur, phosphorous, gallium, chromium, rhenium, indium, tin, nickel phosphorous, nickel boron, and non-magnetic alloys thereof;
at least one additional magnetic unit consisting of first and second magnetic layers and the non-magnetic spacer layer therebetween;
a resistive spacer disposed between the first and the at least one additional magnetic units, wherein the resistive spacer is at a thickness of 100 nm to 1 micron and is selected from the group consisting of selenium, bismuth, tellurium, phosphorous, sulfur, germanium, antimony, and alloys thereof that can be electrochemically reduced, and
wherein a total thickness of the first and second magnetic layers plus the non-magnetic spacer layer within the magnetic unit or the at least one additional magnetic unit consisting of first and second magnetic layers and the non-magnetic spacer layer therebetween is within a skin depth, wherein the skin depth is a depth below a surface of a respective magnetic layer at which current density has fallen to 1/e of surface current density.