# US 2016/0258588 A1 · Optoelectronic Semiconductor Component and Adaptive Headlight for a Motor Vehicle

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- Number: US 2016/0258588 A1
- Document ID: US20160258588A1
- Status: Published application
- Kind: A1
- Application number: 15/032,502
- Filed: 2014-12-04
- Published: 2016-09-08
- Earliest claimed: 2013-12-20
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: Osram Opto Semiconductors GmbH
- Inventors: Stefan Grötsch; Norbert Häfner
- Web page: https://patentgrep.com/patent/US20160258588A1

## CPC

- F21S 41/192: {Details of lamp holders, terminals or connectors}
- F21S 41/153: arranged in a matrix
- F21V 23/005: {the substrate is supporting also the light source}
- F21V 23/04: the elements being switches (safety devices F21V25/00)
- H10H 20/8506: {Containers}
- H10W 90/00: Package configurations
- F21Y 2101/00: Point-like light sources
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/856: Reflecting means
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- F21S: NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED

## Abstract

An optoelectronic semiconductor component and an adaptive headlight are disclosed. In an embodiment an optoelectronic semiconductor component includes a carrier having a carrier top side and a carrier underside, a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation, electrical contact locations at the carrier underside, which are designed for electrically connecting the semiconductor component and a drive unit for electrically addressing the semiconductor component and for electrically driving the active zones, wherein the active zones are fitted in a regular grid at the carrier top side, wherein the grid has a grid pitch, wherein geometrical midpoints of radiation main sides of the active zones lie on grid points of the grid, and wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch.

## Claims

### Claim at position 1

1-12. (canceled)

### Claim 13

An adaptive headlight for a motor vehicle, the headlight comprising:
a mounting platform; and
a plurality of optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises:
a carrier having a carrier top side and a carrier underside;
a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation;
at least three electrical contact locations at the carrier underside, which are designed at least for electrically connecting the semiconductor component; and
at least one drive unit for electrically addressing a respective optoelectronic semiconductor component and for electrically driving the active zones,
wherein the active zones are fitted in a regular grid at the carrier top sides of the optoelectronic semiconductor components, as seen in plan view,
wherein the grid has a grid pitch,
wherein geometrical midpoints of radiation main sides of the active zones within the optoelectronic semiconductor component lie on grid points of the grid, as seen in plan view, and within a tolerance of at most 20% of the grid pitch,
wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch,
wherein the semiconductor components are arranged on the mounting platform in such a way so that all the active zones of the optoelectronic semiconductor components, with a tolerance of at most 20% of the grid pitch, lie on the grid points of the regular grid,
wherein the grid extends uniformly over all the optoelectronic semiconductor components,
wherein the optoelectronic semiconductor components are connected to one another via exactly one common data line,
wherein individual active zones or groups of active zones of the headlight are drivable independently of one another by the drive unit, and
wherein the optoelectronic semiconductor components have a common voltage line and a common ground line.

### Claim 14 (depends on 13)

The adaptive headlight according to claim 13,
wherein the optoelectronic semiconductor components are surface-mountable,
wherein each of the active zones is formed by exactly one optoelectronic semiconductor chip,
wherein the optoelectronic semiconductor chips, as seen in plan view, are arranged in accordance with the grid,
wherein the grid is a rectangular n×m matrix and has a grid pitch,
wherein n and m are natural numbers between 2 and 12 inclusive,
wherein each active zones, as seen in plan view, has exactly one geometrical midpoint, and
wherein all the geometrical midpoints with a tolerance of at most 5% of the grid pitch lie on the grid points of the grid.

### Claim 15 (depends on 13)

The adaptive headlight according to claim 13,
wherein a conversion element for partial radiation conversion is disposed downstream of each active zone, in a direction away from the respective carrier,
wherein each conversion element completely covers the respective radiation main sides, as seen in plan view, and
wherein each conversion element, as seen in plan view, is surrounded all around by a reflector potting.

### Claim 16 (depends on 13)

The adaptive headlight according to claim 13, wherein an average distance between adjacent active zones and optoelectronic semiconductor chips is at most 50% of the grid pitch.

### Claim 17 (depends on 13)

The adaptive headlight according to claim 13, wherein each carrier is a silicon carrier or a germanium carrier, in which a drive unit is monolithically integrated, and wherein the drive unit comprises a plurality of transistors, based on silicon or germanium.

### Claim 18 (depends on 13)

The adaptive headlight according to claim 13, wherein a layer composed of recrystallized silicon is fitted at the carrier top sides in each case, the layer forming the drive unit and being situated between the respective carrier and the active zone.

### Claim 19 (depends on 13)

The adaptive headlight according to claim 13, wherein each drive units comprises a serial shift register having a data input and having a plurality of signal outputs, and wherein the signal outputs are electrically conductively connected to switches and each of the switches is electrically connected in parallel with one of the active zones.

### Claim 20 (depends on 13)

The adaptive headlight according to claim 13, wherein each optoelectronic semiconductor component comprises at the carrier underside exactly one electrical contact pad for the voltage line, exactly one electrical contact pad for the ground line and one or two contact pads for the data line.

### Claim 21 (depends on 13)

The adaptive headlight according to claim 13, wherein all the active zones and semiconductor chips emit light of the same color during operation so that the emitted color is not adjustable.

### Claim 22 (depends on 13)

The adaptive headlight according to claim 13, wherein a plurality of the active zones have a common growth substrate, and wherein a semiconductor material from which the active zones are constructed is completely or partly removed between adjacent active zones.

### Claim 23

An optoelectronic semiconductor component comprising:
a carrier having a carrier top side and a carrier underside;
a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation;
at least three electrical contact locations at the carrier underside, which are designed at least for electrically connecting the semiconductor component; and
at least one drive unit for electrically addressing the semiconductor component and for electrically driving the active zones,
wherein the active zones are fitted in a regular grid at the carrier top side, as seen in plan view,
wherein the grid has a grid pitch,
wherein geometrical midpoints of radiation main sides of the active zones lie on grid points of the grid, as seen in plan view, and within a tolerance of at most 20% of the grid pitch, and
wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch.