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US 2016/0254808 A1Published application
Cascode connected sic-jfet with sic-sbd and enhancement device
AssigneeRenesas Electronics America Inc.
InventorsTetsuo Sato, Koichi Yamazaki
Life of this patent
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Abstract
An apparatus that includes a first device connected to an inductor. The first device includes a first silicon carbide (SiC) junction gate field-effect transistor (JFET), a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET, and a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET. An inductor input terminal is connected to the drain of the first SiC JFET.
Claims20
An apparatus comprising:
- an inductor comprising an input terminal and an output terminal;
- a first device comprising:
- a first silicon carbide (SiC) junction gate field-effect transistor (JFET), and;
- a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET;
- a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET;
- wherein the inductor input terminal is connected to the drain of the first SiC JFET.
3 more elements
An apparatus comprising:
- a DC-DC converter comprising:
- an inductor comprising an input terminal and an output terminal;
- a first device comprising:
- a first silicon carbide (SiC) junction gate field-effect transistor (JFET), and;
- a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET;
- a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET;
- wherein the inductor input terminal is connected to the drain of the first SiC JFET.
4 more elements
An apparatus comprising:
- an H-bridge comprising
- an inductor comprising an input terminal and an output terminal;
- a first device comprising:
- a first silicon carbide (SiC) junction gate field-effect transistor (JFET), and;
- a first SiC schottky barrier diode (SBD) connected to a gate and a drain of the first SiC JFET;
- a first silicon (Si) transistor connected to transmit current to a source of the first SiC JFET;
- wherein the inductor input terminal is connected to the drain of the first SiC JFET.
4 more elements
Dependencies are inferred from the claim text.