Back to results
US 2016/0254791 A1Published application
High frequency semiconductor integrated circuit
AssigneeKabushiki Kaisha Toshiba
InventorKoji Uejima
Life of this patent
Estimating the term…
Abstract
According to one embodiment, one end of a first line is connected to a first terminal. A first resonance circuit has one end connected to the other end of the first line. A first transistor has one end connected to the other end of a second line, the other end connected to a second terminal, and a control terminal to receive a first control signal. A second transistor has one end connected to the second terminal, and a control terminal to receive a second control signal. A third line is connected to the other end of the second transistor. A second resonance circuit has one end connected to the other end of the third line. A fourth line has one end connected to the other end of the third line, and the other end connected to a third terminal.
Claims16
A high frequency semiconductor integrated circuit comprising:
- a first line including one end connected to a first terminal, and a length of the first line configured to be equal to [n+( 1/12)] times a wavelength of a first high frequency signal when the first high frequency signal is transmitted through the first line, where n is zero, or an integer equal to or greater than one;
- a first resonance circuit including one end connected to the other end of the first line and the other end connected to a ground potential;
- a second line including one end connected to the other end of the first line, and a length of the second line configured to be equal to [n+(⅙)] times the wavelength of the first high frequency signal when the first high frequency signal is transmitted through the second line;
- a first transistor including a control terminal to receive a first control signal, one end connected to the other end of the second line, and the other end connected to a second terminal;
- a second transistor including a control terminal to receive a second control signal and one end connected to the second terminal;
- a third line including one end connected to the other end of the second transistor, and a length of the third line configured to be equal to [n+(⅙)] times a wavelength of a second high frequency signal when the second high frequency signal is transmitted through the third line;
- a second resonance circuit including one end connected to the other end of the third line and the other end connected to the ground potential;
- and
- a fourth line including one end connected to the other end of the third line and the other end connected to a third terminal, and a length of the fourth line configured to be equal to [n+( 1/12)] times the wavelength of the second high frequency signal when the second high frequency signal is transmitted through the fourth line.
6 more elements
A high frequency semiconductor integrated circuit comprising:
- a first open stub including one end connected to a first terminal and the other end left open-circuit, and a length of the first open stub being set at [n+( 1/12)] times a wavelength of a first high frequency signal, where n is zero, or an integer equal to or greater than one;
- a first line including one end connected to the one end of the first open stub, and a length of the first line configured to be equal to (m/4) times the wavelength of the first high frequency signal when the first high frequency signal is transmitted through the first line, where m is an integer equal to or greater than one;
- a first transistor including a control terminal to receive a first control signal, one end connected to the other end of the first line, and the other end connected to a second terminal;
- a second transistor including a control terminal to receive a second control signal and one end connected to the second terminal;
- a second open stub including one end connected to the other end of the second transistor and the other end left open-circuit, and a length of the second open stub being set at [n+( 1/12)] times a wavelength of a second high frequency signal;
- and
- a second line including one end connected to the one end of the second open stub and the other end connected to a third terminal, and a length of the second line configured to be equal to (m/4) times the wavelength of a second high frequency signal when the second high frequency signal is transmitted through the second line.
4 more elements
A high frequency semiconductor integrated circuit comprising:
- a first transistor including a control terminal to receive a first high frequency signal, the first transistor amplifying the first high frequency signal, the first transistor outputting an amplified signal from one end of the first transistor, the first transistor including the other end connected to a ground potential;
- a first line including one end connected to the one end of the first transistor, and a length of the first line configured to be equal to [n+(⅙)] times a wavelength of the amplified signal when the amplified signal is transmitted through the first line, where n is zero, or an integer equal to or greater than one;
- a first resonance circuit including one end connected to the other end of the first line and the other end connected to the ground potential;
- and
- a second line including one end connected to the other end of the first line and the other end connected to a power supply, and a length of the second line configured to be equal to [n+( 1/12)] times the wavelength of the amplified signal when the amplified signal is transmitted through the second line.
2 more elements
Dependencies are inferred from the claim text.