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US 2016/0254649 A1Published application
Method for mode control in multimode semiconductor waveguide lasers
AssigneeNorthrop Grumman Systems Corporation
InventorsRobert R. Rice, Elizabeth T. Kunkee
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Abstract
One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.
Claims9
A method, comprising:
- depositing, for patterning current injection, a layer of SiN on a surface of a wide stripe semiconductor waveguide;
- patterning vias in the layer of SiN where current injection is desired;
- and
- covering the layer of SiN and the surface of the wide stripe semiconductor waveguide with ohmic metal.
1 more element
A method, comprising:
- etching, for patterning current injection, through a p+ cap layer of a wide stripe semiconductor waveguide to reduce current spreading;
- depositing a nitride on the p+ cap layer;
- and
- etching vias in the nitride for current injection in predetermined areas.
1 more element
A method, comprising:
- using, for patterning current injection, ion implant isolation where current injection is to be avoided;
- and
- covering surface of the wide stripe semiconductor waveguide with ohmic metal.
Dependencies are inferred from the claim text.