# US 2016/0254409 A1 · Method for manufacturing light-emitting element

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- Number: US 2016/0254409 A1
- Document ID: US20160254409A1
- Status: Published application
- Kind: A1
- Application number: 15/149,837
- Filed: 2016-05-09
- Published: 2016-09-01
- Earliest claimed: 2014-07-08
- Assignees: Epistar Corporation
- Applicants: Epistar Corporation
- Inventors: Min-Yen TSAI; De-Shan KUO
- Web page: https://patentgrep.com/patent/US20160254409A1

## CPC

- H10H 20/018: {Bonding of wafers}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/036: {of packages}
- H10H 20/0363: {of optical field-shaping means}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A method for manufacturing a light-emitting element, including steps of: providing a wafer-level element including a wafer and a light-emitting stack on the wafer, wherein the wafer including an upper surface and a bottom surface, and light-emitting stack is formed on the upper surface of the wafer; forming a light-emitting stack on the upper surface of the wafer; cutting the wafer from one of the bottom surface or the top surface of the wafer by a water-jet laser having a first beam size; cutting the wafer from the other one of the bottom surface or the upper surface of the wafer by the water-jet laser having a second beam size; and dividing the wafer-level element wafer and the light-emitting stack into a plurality of light-emitting dies.

## Claims

### Claim 1

A method for manufacturing a light-emitting element, comprising steps of:
providing a wafer-level element comprising a wafer and a light-emitting stack on the wafer, wherein the wafer comprises an upper surface and a bottom surface, and light-emitting stack is formed on the upper surface of the wafer;
cutting the wafer from one of the bottom surface or the top surface of the wafer by a water-jet laser having a first beam size;
cutting the wafer from the other one of the bottom surface or the upper surface of the wafer by the water-jet laser having a second beam size; and
dividing the wafer-level element into a plurality of light-emitting dies.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising forming a plurality of trenches for dividing the light-emitting stack into multiple light-emitting blocks and exposing the upper surface of the wafer before cutting the wafer by the water jet laser.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the wafer comprises a plurality of thinned portions after being cut by the water-jet laser, and the method further comprises breaking the thinned portions to divide the wafer-level element into the plurality of light-emitting elements.

### Claim 4 (depends on 2)

The method according to claim 2, wherein the step of dividing the wafer-level element into a plurality of light-emitting dies comprises continuing cutting the wafer by the water-jet laser to penetrate through the wafer completely.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the water-jet laser comprises a water jet and a laser traveling in the water jet.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the wafer comprises a first arc portion formed by the water-jet laser having the first beam size and a second arc portion formed by the water-jet laser having the second beam size, wherein one of the light-emitting dies comprises a side surface having the first arc portion and the second arc portion wherein the first arc portion is closed to the bottom surface, and the second arc portion is closed to the top surface.

### Claim 7 (depends on 6)

The method according to claim 6, further comprising cutting the wafer from one of the bottom surface or the top surface of the wafer to form a third arc portion by the water-jet laser having a third beam size different from the first beam size or the second beam size.

### Claim 8 (depends on 7)

The method according to claim 7, wherein the first beam size is bigger than one of the second beam size and the third beam size.

### Claim 9 (depends on 6)

The method according to claim 6, further comprising forming a reflective structure on the bottom surface and the first arc portion before dividing the wafer-level element into a plurality of light-emitting dies.