# US 2016/0254355 A1 · Electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0254355 A1 - Document ID: US20160254355A1 - Status: Published application - Kind: A1 - Application number: 14/633,159 - Filed: 2015-02-27 - Published: 2016-09-01 - Earliest claimed: 2015-02-27 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Matthias Koenig; Guenther Ruhl - Web page: https://patentgrep.com/patent/US20160254355A1 ## CPC - H10D 62/882: {Graphene} - H10D 30/01: Manufacture or treatment - H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT] - H10D 62/80: characterised by the materials - H10D 62/8303: {Diamond} - H10D 64/111: {Field plates} - H10D 64/118: {Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges} - H10D 64/516: {the thicknesses being non-uniform} - H10D 64/518: {characterised by their lengths or sectional shapes} - G01N 27/4146: {involving nanosized elements, e.g. nanotubes, nanowires} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) ## Abstract According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer. ## Claims ### Claim 1 An electronic device, comprising: a layer comprising a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure comprises a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to generate an electrical field to adjust the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, and wherein the first contact region and the second contact region of the dielectric structure each comprise doped dielectric material. ### Claim 2 (depends on 1) The electronic device of claim 1, wherein the device area of the layer is free of further electrodes that are in direct physical contact with the layer. ### Claim 3 (canceled) ### Claim 4 (canceled) ### Claim 5 (canceled) ### Claim 6 (depends on 1) The electronic device of claim 1, wherein the first contact region and the second contact region of the dielectric structure are configured to provide the same electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer. ### Claim 7 (depends on 1) The electronic device of claim 1, wherein the first contact region and the second contact region of the dielectric structure are configured to provide different electric characteristics of the two-dimensional material in the first contact area and in the second contact area of the layer. ### Claim 8 (depends on 1) The electronic device of claim 1, wherein the two-dimensional material comprises graphene. ### Claim 9 (depends on 1) The electronic device of claim 1, wherein the layer comprises a monolayer of the two-dimensional material. ### Claim 10 An electronic device, comprising: a layer comprising a two-dimensional material, a dielectric structure disposed at a first side of the layer, wherein the dielectric structure comprises a first contact region and a second contact region defining a first contact area and a second contact area of the layer, respectively, wherein the first contact region and the second contact region are spaced apart from each other so that a device area of the layer is provided between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, the first electrode and the second electrode electrically contacting the first contact area and the second contact area of the layer, respectively; wherein the first contact region and second contact region of the dielectric structure comprise a doped dielectric material to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, wherein a space between the first contact region and the second contact region of the dielectric structure corresponding to the device area of the layer is free of the doped dielectric material. ### Claim 11 (depends on 10) The electronic device of claim 10, wherein the first electrode and the second electrode are at least partially embedded in a dielectric layer, wherein the layer is disposed on the dielectric layer, and wherein the dielectric structure is disposed over the layer. ### Claim 12 (depends on 11) The electronic device of claim 11, wherein the dielectric layer is disposed on a semiconductor carrier. ### Claim 13 (depends on 10) The electronic device of claim 10, wherein the dielectric structure is disposed on a semiconductor carrier; wherein the space between the first contact region and the second contact region of the dielectric structure is filled with dielectric material, wherein the layer is disposed over the dielectric structure, and wherein the first electrode and the second electrode are disposed over the layer. ### Claim 14 (depends on 13) The electronic device of claim 13, wherein the dielectric material disposed in the space between the first contact region and the second contact region of the dielectric structure comprises undoped dielectric material. ### Claim 15 (depends on 10) The electronic device of claim 10, wherein the two-dimensional material comprises graphene. ### Claim 16 An electronic device, comprising: a layer comprising a two-dimensional material, a dielectric structure disposed at a first side of the layer, wherein the dielectric structure comprises a first contact region and a second contact region defining a first contact area and a second contact area of the layer, respectively, wherein the first contact region and the second contact region are spaced apart from each other so that a device area of the layer is provided between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, the first electrode and the second electrode electrically contacting the first contact area and the second contact area of the layer, respectively; wherein the first contact region and the second contact region of the dielectric structure comprise a first electrically conductive portion and a second electrically conductive portion, respectively, wherein the first electrically conductive portion and the second electrically conductive portion are electrically separated from the layer to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer by applying a voltage at the first electrically conductive portion and at the second electrically conductive portion, and wherein a device region is disposed between the first contact region and the second contact region of the dielectric structure corresponding to the device area of the layer, the device region comprising dielectric material. ### Claim 17 (depends on 16) The electronic device of claim 16, further comprising: an electronic circuit electrically coupled to the first electrically conductive portion and the second electrically conductive portion, wherein the electronic circuit is configured to apply a voltage to the first electrically conductive portion and the second electrically conductive portion. ### Claim 18 (depends on 16) The electronic device of claim 16, wherein the device region disposed between the first contact region and the second contact region of the dielectric structure is free of electrically conductive material. ### Claim 19 (depends on 16) The electronic device of claim 16, wherein the two-dimensional material comprises graphene. ### Claim 20 (depends on 16) The electronic device of claim 16, wherein the first electrically conductive portion is electrically separated from the second electrically conductive portion, and wherein an electronic circuit is configured to apply a first voltage to the first electrically conductive portion and a second voltage different from the first voltage to the second electrically conductive portion. ### Claim 21 An electronic device, comprising: a layer comprising a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure comprises a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to generate an electrical field to adjust the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, and wherein the first contact region comprises a first electrically conductive portion and wherein the second contact region of the dielectric structure comprises a second electrically conductive portion, wherein the first electrically conductive portion and the second electrically conductive portion are electrically separated from the layer.