# US 2016/0254342 A1 · Magnetic core, inductor, and method for fabricating the magnetic core > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0254342 A1 - Document ID: US20160254342A1 - Status: Published application - Kind: A1 - Application number: 14/632,519 - Filed: 2015-02-26 - Published: 2016-09-01 - Earliest claimed: 2015-02-26 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Yen-Shuo SU; Chun-Tsung KUO; Jiech-Fun LU - Web page: https://patentgrep.com/patent/US20160254342A1 ## CPC - H10D 1/20: Inductors - H01F 17/0033: {with the coil helically wound around a magnetic core} - H01F 41/046: {structurally combined with ferromagnetic material} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ## Abstract A magnetic core includes a center section having a substantially uniform thickness, and an edge section connected to and surrounding the center section. The edge section includes a bottom portion and a top portion disposed on the bottom portion, in which the bottom portion has a gradual side surface since the top portion has a steep side surface. The profile of the magnetic core can be more rectangular thereby providing better inductor performance. ## Claims ### Claim at position 1 1-8. (canceled) ### Claim 9 A magnetic core, comprising: a center section having a substantially uniform thickness; and an edge section connected to and surrounding the center section, the edge section comprising a bottom portion and a top portion disposed on the bottom portion, wherein the bottom portion has a gradual side surface since the top portion has a steep side surface. ### Claim 10 (depends on 9) The magnetic core of claim 9, wherein a sum of the a thickness of the bottom portion and a thickness of the top portion is substantially equals to the thickness of the center section. ### Claim 11 (depends on 10) The magnetic core of claim 10, wherein a ratio of the thickness of the bottom portion to the thickness of the top portion is in a range from about 2/3 to about 3/2. ### Claim 12 (depends on 9) The magnetic core of claim 9, wherein a width of the bottom portion extended from the center section is greater than that of the top portion. ### Claim 13 (depends on 9) The magnetic core of claim 9, wherein the bottom portion has an inclined side surface, and the top portion has a curve side surface. ### Claim 14 (depends on 9) The magnetic core of claim 9, further comprising a middle portion disposed between the bottom portion and the top portion, wherein the middle portion has the steep side surface. ### Claim 15 (depends on 14) The magnetic core of claim 14, wherein the bottom portion has an inclined side surface, the middle portion and the top portion respectively has a curve side surface. ### Claim 16 A semiconductor device, comprising: a bottom conductive layer; a bottom dielectric layer formed on the bottom conductive layer; a magnetic core formed on the bottom dielectric layer, the magnetic core comprising: a center section having a substantially uniform thickness; and an edge section connected to and surrounding the center section, the edge section comprising a bottom portion and a top portion disposed on the bottom portion, wherein a side surface of the top portion is steeper than that of the bottom portion; a top dielectric layer formed on the magnetic core; and a top conductive layer formed on the top dielectric layer. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein the bottom conductive layer and the top conductive layer form a winding wire wound on the magnetic core. ### Claim 18 (depends on 16) The semiconductor device of claim 16, wherein the bottom portion has an inclined side surface, and the top portion has a curve side surface. ### Claim 19 (depends on 16) The semiconductor device of claim 16, further comprising a middle portion disposed between the bottom portion and the top portion, wherein a side surface of the middle portion is steeper than that of the bottom portion. ### Claim 20 (depends on 16) The semiconductor device of claim 16, wherein the magnetic core is made of cobalt zirconium tantalum (CZT), nickel iron (NiFe), or iron nitride (FeN). ### Claim 21 (depends on 19) The semiconductor device of claim 19, wherein the bottom portion has an inclined side surface, the middle portion has a curve surface, and the top portion has a curve surface. ### Claim 22 (depends on 16) The semiconductor device of claim 16, wherein the bottom conductive layer and the top conductive layer are made of W, Co, Al, or Cu. ### Claim 23 (depends on 16) The semiconductor device of claim 16, wherein the bottom dielectric layer and the top dielectric layer are made of silicon nitride, silicon carbide, nitrogen-doped silicon carbide, silicon oxynitride, oxygen-doped silicon carbide, or silicon oxide. ### Claim 24 (depends on 16) The semiconductor device of claim 16, wherein the edge section comprises an anisotropic etched surface. ### Claim 25 (depends on 16) The semiconductor device of claim 16, wherein a sum of a thickness of the bottom portion and a thickness of the top portion is substantially equals to the thickness of the center section. ### Claim 26 (depends on 16) The semiconductor device of claim 16, wherein the magnetic core is not in a shape of triangle. ### Claim 27 (depends on 16) The semiconductor device of claim 16, wherein the bottom portion is wider than the top portion. ### Claim 28 (depends on 9) The magnetic core of claim 9, wherein the edge section has at least two slopes at an edge.