# US 2016/0254232 A1 · Combined wafer production method with laser treatment and temperature-induced stresses

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- Number: US 2016/0254232 A1
- Document ID: US20160254232A1
- Status: Published application
- Kind: A1
- Application number: 15/028,332
- Filed: 2014-10-08
- Published: 2016-09-01
- Earliest claimed: 2013-10-08
- Assignees: Silectra GmbH
- Applicants: Silectra GmbH
- Inventors: Wolfram Drescher; Jan Richter; Christian Beyer
- Web page: https://patentgrep.com/patent/US20160254232A1

## CPC

- H10P 90/1924: {with separation/delamination along a porous layer}
- B23K 26/0624: {using ultrashort pulses, i.e. pulses of 1 ns or less}
- B23K 26/359: by providing a line or line pattern, e.g. a dotted break initiation line
- B23K 26/40: taking account of the properties of the material involved
- B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B28D 5/0005: {by breaking, e.g. dicing}
- B28D 5/0011: {with preliminary treatment, e.g. weakening by scoring}
- H10F 71/139: {using temporary substrates}
- H10F 71/1395: {for thin-film devices}
- H10P 10/12: {Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P90/1914)}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 90/00: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 2103/50: {Inorganic materials other than metals or composite materials}
- B23K 2103/56: {being semiconducting}
- C30B 33/06: Joining of crystals
- H10W 46/503: {Located in scribe lines}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 10/547: Monocrystalline silicon PV cells
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B28D: WORKING STONE OR STONE-LIKE MATERIALS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The present invention relates to a method for the production of layers of solid material. The method according to the invention comprises at the very least the steps of providing a solid body (2) for the separation of at least one layer of solid material (4), generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer (10) disposed on the solid body (2) in order to generate, in particular mechanically, stresses in the solid body (2), due to the stresses a crack propagating in the solid body (2) along the detachment plane (8), which crack separates the layer of solid material (4) from the solid body (2).

## Claims

### Claim 1

A method for the production of layers of solid material, comprising at the very least the following steps:
providing a solid body (2) for the separation of at least one layer of solid material (4),
generating defects by means of at least one radiation source (18), in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body,
providing a receiving layer (10) for holding the layer of solid material (4) on the solid body (2),
applying heat to the receiving layer (10) in order to generate, in particular mechanically, stresses in the solid body (2), due to the stresses a crack propagating in the solid body (2) along the detachment plane (8), which crack separates the layer of solid material (4) from the solid body (2).

### Claim 2 (depends on 1)

The method according to claim 1,
characterised in that
the at least one radiation source (18) for providing the radiation (6) to be introduced into the solid body (2) is configured such that the rays (6) irradiated by it generate the defects at predetermined locations within the solid body (2).

### Claim 3 (depends on 2)

The method according to claim 2,
characterised in that
the radiation source (18) is set up such that the rays (6) irradiated by it in order to generate the detachment plane (8) penetrate into the solid body (2) to a defined depth of less than 200 μm, preferably of less than 100 μm and more preferably of less than 50 μm and particularly preferably of less than 20 μm.

### Claim 4 (depends on 2)

The method according to claim 2,
characterised in that
the radiation source is set up such that the rays (6) irradiated by it in order to generate the detachment plane (8) penetrate into the solid body (2) to a defined depth of more than 100 μm, preferably of more than 200 μm and more preferably of more than 400 μm and particularly preferably of more than 700 μm.

### Claim 5

The method according to any of the preceding claims,
characterised in that
the solid body (2) is disposed on a holding layer (12) for holding the solid body (2), the holding layer (12) being disposed on a first level surface portion (14) of the solid body (2), the first level surface portion (14) of the solid body (2) being spaced apart from a second level surface portion (16) of the solid body (2), the polymer layer (10) being disposed on the second level surface portion (16), and the detachment plane (8) being aligned parallel to the first level surface portion (14) and/or the second level surface portion (16).

### Claim 6

The method according to any of the preceding claims,
characterised in that
the solid body (2) comprises silicon carbide and/or gallium arsenite and/or a ceramic material, and the receiving layer is made of a polymer layer (10), the polymer layer and/or the holding layer (12) being made at least partially of PDMS, the holding layer (12) being disposed on an at least partially level surface of a stabilisation device (20) which is made at least partially of at least one metal.

### Claim 7

The method according to any of the preceding claims,
characterised in that
the stresses in the solid body (2) can be set up such that the crack initiation and/or the crack propagation can be controlled in order to generate a pre-determined topography of the surface that is produced in the crack plane.

### Claim 8

The method according to any of the preceding claims,
characterised in that
the radiation source is a femtosecond laser.

### Claim 9

The method according to any of the preceding claims,
characterised in that
the radiation source, in particular the laser, has a pulse duration of less than 10 ps, preferably of less than 1 ps and particularly preferably of less than 500 fs.

### Claim 10

The method according to any of the preceding claims,
characterised in that
the energy of the laser beam, in particular of the femtosecond laser, is chosen such that the damage propagation within the solid body is smaller than 3 times the Rayleigh length, preferably smaller than the Rayleigh length and particularly preferably smaller than one third of the Rayleigh length.

### Claim 11

The method according to any of the preceding claims,
characterised in that
the wavelength of the laser beam, in particular of the femtosecond layer, is chosen such that the absorption of the solid body is less than 10 cm−1 and preferably less than 1 cm−1 and particularly preferably less than 0.1 cm−1.

### Claim 12

The method according to any of the preceding claims,
characterised in that
the individual defects respectively result from multiphoton excitation brought about by the femtosecond laser.

### Claim 13 (depends on 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)

A wafer, produced by a method according to any of claims 1 to 12.