# US 2016/0254151 A1 · Laser annealing device, production process of polycrystalline silicon thin film, and polycrystalline silicon thin film produced by the same

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- Number: US 2016/0254151 A1
- Document ID: US20160254151A1
- Status: Published application
- Kind: A1
- Application number: 14/761,998
- Filed: 2014-12-29
- Published: 2016-09-01
- Earliest claimed: 2014-03-17
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: BOE Technology Group Co., Ltd.
- Inventors: Xueyan Tian
- Web page: https://patentgrep.com/patent/US20160254151A1

## CPC

- H10P 14/3816: {Pulsed laser beam}
- B23K 26/0006: {taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence)}
- B23K 26/0622: by shaping pulses
- B23K 26/352: for surface treatment
- H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3454: {Amorphous}
- H10P 14/3808: {using laser beams}
- H10P 14/381: {Beam shaping, e.g. using a mask}
- H10P 14/3812: {Shape of mask}
- H10P 14/3814: {Continuous wave laser beam}
- H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20)
- H10P 72/0436: {mainly by radiation}
- B23K 26/066: by using masks
- B23K 26/127: {in an enclosure}
- B23K 2101/40: Semiconductor devices
- B23K 2103/56: {being semiconducting}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.

## Claims

### Claim 1

A laser annealing device comprising an annealing chamber, in which a laser generator is provided, wherein
an annealing window, through which the laser passes, and
two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein a light-cutting end face of each of the light-cutting plates is a wedge-shaped end face.

### Claim 2 (depends on 1)

The laser annealing device as claimed in claim 1, wherein the wedge-shaped end face is two planes forming an included angle.

### Claim 3 (depends on 2)

The laser annealing device as claimed in claim 2, wherein the upper plane in the two planes forming an included angle and the plane, in which the annealing window lies, form an included angle of 40 to 50 degrees.

### Claim 4 (depends on 1)

The laser annealing device as claimed in claim 1, wherein the wedge-shaped end face is a semicylinder, a semielliptic cylinder or a parabolic cylinder.

### Claim 5 (depends on 1)

The laser annealing device as claimed in claim 1, wherein the laser generator is an excimer laser.

### Claim 6 (depends on 5)

The laser annealing device as claimed in claim 5, wherein the excimer laser is a xenon chloride excimer laser, a krypton fluoride excimer laser or an argon fluoride excimer laser.

### Claim 7 (depends on 1)

The laser annealing device as claimed in claim 1, wherein the laser annealing device further comprises a supporter, which is positioned at the bottom of the annealing chamber, for supporting a substrate.

### Claim 8 (depends on 1)

A production process of a polycrystalline silicon thin film, wherein the production process comprises
forming an amorphous silicon thin film on a substrate; and
subjecting the amorphous silicon thin film to laser annealing with the laser annealing device as claimed in claim 1, so as to form a polycrystalline silicon thin film.

### Claim 9 (depends on 8)

A production process as claimed in claim 8, wherein during the laser annealing, the impulse frequency of the laser is 500 Hz, the overlap ratio is 92% to 98%, the scanning speed of the laser is 4 mm/s to 16 mm/s, and the energy density of the laser is 300 to 500 mJ/cm2.

### Claim 10 (depends on 8)

A polycrystalline silicon thin film, wherein the polycrystalline silicon thin film is produced by the production process as claimed in claim 8.