# US 2016/0254148 A1 · Silicon carbide semiconductor device and manufacturing method for same

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- Number: US 2016/0254148 A1
- Document ID: US20160254148A1
- Status: Published application
- Kind: A1
- Application number: 15/027,423
- Filed: 2014-09-26
- Published: 2016-09-01
- Earliest claimed: 2013-10-28
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Shoji KITAMURA
- Web page: https://patentgrep.com/patent/US20160254148A1

## CPC

- H10P 14/3408: {Silicon carbide}
- H10D 8/051: {of Schottky diodes}
- H10D 8/60: Schottky-barrier diodes
- H10D 62/53: the imperfections being within the semiconductor body
- H10D 62/8325: {Silicon carbide}
- H10D 64/0123: {to silicon carbide}
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10P 14/2904: {Silicon carbide}
- H10P 14/3808: {using laser beams}
- H10P 14/3818: {using particle beams}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/2042: {into crystalline silicon carbide}
- H10P 30/208: {of electrically inactive species}
- H10P 30/21: {of electrically active species}
- H10P 30/218: {characterised by the implantation in a compound semiconductor of both electrically active and inactive species in the same semiconductor region to be doped n-type or p-type}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method of manufacturing a silicon carbide semiconductor device in which a first-conductivity-type silicon carbide semiconductor epitaxial layer is formed on a main surface of a first-conductivity-type silicon carbide semiconductor substrate, wherein the silicon carbide semiconductor device manufacturing method includes: a step for supplying strain energy to at least one of (i) a surface layer of the surface of the silicon carbide semiconductor substrate on which the silicon carbide semiconductor epitaxial layer is formed, and (ii) the surface of the silicon carbide semiconductor epitaxial layer, a step for forming a carbon film on the surface layer, and a step for forming a recrystallized layer by adding a heat treatment for recrystallizing the surface layer to which the strain energy is supplied.

## Claims

### Claim at position 1

1-3. (canceled)

### Claim 4

A method of manufacturing a silicon carbide semiconductor device in which a first-conductivity-type silicon carbide semiconductor epitaxial layer is formed on a main surface of a first-conductivity-type silicon carbide semiconductor substrate, wherein the silicon carbide semiconductor device manufacturing method comprises:
a step for supplying strain energy to at least one of (i) a surface layer of the surface of the silicon carbide semiconductor substrate on which the silicon carbide semiconductor epitaxial layer is formed, and (ii) the surface of the silicon carbide semiconductor epitaxial layer,
a step for forming a carbon film on the surface layer, and
a step for forming a recrystallized layer by adding a heat treatment for recrystallizing the surface layer to which the strain energy is supplied.

### Claim 5 (depends on 4)

The method of manufacturing the silicon carbide semiconductor device according to claim 4, wherein the strain energy is provided by one of: ion implantation, plasma treatment, electron beam irradiation and proton irradiation.

### Claim 6 (depends on 5)

The method of manufacturing the silicon carbide semiconductor device according to claim 5, wherein an ion species used in the ion implantation is an ion species of a same conductivity type as the silicon carbide semiconductor substrate.

### Claim 7 (depends on 5)

The method of manufacturing the silicon carbide semiconductor device according to claim 5, wherein an ion species used in the ion implantation is any ion species selected from a group consisting of the elements C, Si and Ge, which have a valence of 4.

### Claim 8 (depends on 5)

The method of manufacturing the silicon carbide semiconductor device according to claim 5, wherein an ion species used in the ion implantation is a noble gas element.

### Claim 9 (depends on 8)

The method of manufacturing the silicon carbide semiconductor device according to claim 8, wherein the noble gas element is any element selected from a group consisting of He, Ne, and Ar.

### Claim 10 (depends on 4)

The method of manufacturing the silicon carbide semiconductor device according to claim 4, wherein the heat treatment for recrystallizing the surface layer is one of (i) a high-frequency induction heating method and (ii) a laser irradiation method.

### Claim 11 (depends on 10)

The method of manufacturing the silicon carbide semiconductor device according to claim 10, wherein, in order to reduce carrot defects, the heat treatment for recrystallizing the surface layer is at a temperature of between 1600° C. to 2000° C. for between 30 to 180 seconds.

### Claim 12 (depends on 4)

A silicon carbide semiconductor device comprising the recrystallized layer formed by the method of forming said recrystallized layer according to claim 4.