# US 2016/0254136 A1 · Method of depositing a silicon-containing film > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0254136 A1 - Document ID: US20160254136A1 - Status: Published application - Kind: A1 - Application number: 15/049,345 - Filed: 2016-02-22 - Published: 2016-09-01 - Earliest claimed: 2015-02-26 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Jun SATO; Shigehiro MIURA - Web page: https://patentgrep.com/patent/US20160254136A1 ## CPC - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - C23C 16/24: Deposition of silicon only - C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers} - C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments} - H10D 1/047: {of conductor-insulator-semiconductor capacitors, e.g. trench capacitors} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6506: {Formation of intermediate materials} - H10P 14/6903: {containing silicon} - H10P 14/3444: {P-type} - H10P 14/3454: {Amorphous} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method of depositing a silicon-containing film using a film deposition apparatus is provided. The apparatus includes a turntable provided in a process chamber. In the method, a seed layer is formed on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable. A boron-containing gas is supplied from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate. A silane-based gas is supplied from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas. ## Claims ### Claim 1 A method of depositing a silicon-containing film using a film deposition apparatus, the apparatus including a turntable provided in a process chamber and configured to receive a substrate thereon, first and second process areas provided apart from each other along a rotational direction of the turntable, a first process gas supplying unit configured to supply a first process gas to the substrate in the first process area, and a second process gas supplying unit configured to supply a second process gas to the substrate in the second process area, the method comprising steps of: forming a seed layer on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable; supplying a boron-containing gas as a catalytic gas from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate; and supplying a silane-based gas as a source gas from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas. ### Claim 2 (depends on 1) The method as claimed in claim 1, wherein the steps of supplying the boron-containing gas as the catalytic gas and supplying the silane-based gas as the source gas are repeated until a silicon-containing film is deposited up to a predetermined film thickness on the surface of the substrate. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the steps of forming the seed layer, supplying the boron-containing as and supplying the silane-based gas as the source gas are performed in a state of heating the substrate in a range of 200 to 350 degrees C. ### Claim 4 (depends on 3) The method as claimed in claim 3, wherein the steps of forming the seed layer, supplying the boron-containing gas as the catalytic gas and supplying the silane-based gas as the source gas are performed in a state of heating the substrate in a range of 250 to 350 degrees C. ### Claim 5 (depends on 2) The method as claimed in claim 2, further comprising: purging the substrate by supplying a separation gas to the substrate in a separation area. ### Claim 6 (depends on 1) The method as claimed in claim 1, wherein the step of forming the seed layer is performed for three to seven minutes. ### Claim 7 (depends on 1) The method as claimed in claim 1, wherein the aminosilane gas is (diisopropylamino)silane gas. ### Claim 8 (depends on 1) The method as claimed in claim 1, wherein the boron-containing gas includes BH3, B2H6, B(CH3), B(C2H5)3, or BCl3. ### Claim 9 (depends on 1) The method as claimed in claim 1, wherein the silane-based gas includes SiH4, Si2H6 or Si3H8. ### Claim 10 (depends on 1) The method as claimed in claim 1, wherein the film deposition apparatus includes separation areas located upstream of the first process area in the rotational direction of the turntable and between the first process area and the second process area and configured to supply a separation gas to separate the first process gas from the second process gas, and further comprising: supplying the separation gas to the substrate before the step of supplying the boron-containing gas as the catalytic gas and between the steps of supplying the boron-containing gas as the catalytic gas and supplying the silane-based gas as the source gas while rotating the turntable. ### Claim 11 (depends on 1) The method as claimed in claim 1, wherein the film deposition apparatus further includes a third process area provided apart from the second process area located downstream of the second process area in the rotational direction of the turntable, a third process gas supplying unit configured to supply a third process gas to the surface of the substrate in the third process area, and a plasma generator configured to generate plasma from the third process gas supplied from the third process gas supplying unit, and further comprising a step of: supplying a nitriding plasma to the surface of the substrate in the third process area while rotating the turntable after the step of supplying the aminosilane gas. ### Claim 12 (depends on 11) The method as claimed in claim 11, wherein the third process gas is nitrogen gas or ammonia gas, and the nitriding plasma is N2 plasma or NH3 plasma. ### Claim 13 (depends on 11) The method as claimed in claim 11, wherein the film deposition apparatus includes a third separation area provided between the second process area and the third process area and configured to supply the separation gas to separate the second process gas from the third process gas, and further comprising a step of: supplying the separation gas to the substrate while rotating the turntable between the steps of supplying the boron-containing gas as the catalytic gas and supplying the silane-based gas as the source gas.