# US 2016/0252547 A1 · Probe pin and method for producing a probe pin > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2016/0252547 A1 - Document ID: US20160252547A1 - Status: Published application - Kind: A1 - Application number: 15/034,918 - Filed: 2013-11-07 - Published: 2016-09-01 - Earliest claimed: 2013-11-07 - Assignees: Heraeus Deutschland GmbH & Co. KG - Applicants: Heraeus Deutschland GmbH & Co. KG - Inventors: Per Soerensen; Nicole Staudt; Reinhold Weiland; Ingo Prunzel; David Francis Lupton - Web page: https://patentgrep.com/patent/US20160252547A1 ## CPC - G01R 1/06755: {Material aspects} - G01R 1/06788: {Hand-held or hand-manipulated probes, e.g. for oscilloscopes or for portable test instruments (end pieces terminating in a probe H01R11/18)} - G01R 3/00: Apparatus or processes specially adapted for the manufacture {or maintenance} of measuring instruments {, e.g. of probe tips} - H01R 43/20: for assembling or disassembling contact members with insulating base, case or sleeve - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H01R: ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS ## Abstract A probe pin (100, 100′) for electronic testing of semi-conductor elements is provided. The pin contains an electrically conductive core element (200) made up of a metallic alloy, and an electrically insulating jacket element (300) which surrounds the core element (200) over regions thereof. The core element (200) contains a distal contact section (210) for electrical contacting to a semi-conductor element. The metallic alloy of the core element contains at least 67% by weight rhodium, 0.1% by weight to 1% by weight zirconium, up to 1% by weight yttrium, and up to 1% by weight cerium. A method for producing a probe pin is also described. ## Claims ### Claim at position 1 -15. (canceled) ### Claim 16 A probe pin for electronic testing of semi-conductor elements, comprising an electrically conductive core element comprising a metallic alloy, and an electrically insulating jacket element, wherein the jacket element surrounds the core element over regions thereof, wherein the core element comprises a distal contact section for electrical contact with a semi-conductor element, and wherein the metallic alloy of the core element comprises at least 67% by weight rhodium; 0.1% by weight to 1% by weight zirconium; up to 1% by weight yttrium; and up to 1% by weight cerium. ### Claim 17 (depends on 16) The probe pin according to claim 16, wherein the metallic alloy comprises at least 97% by weight rhodium. ### Claim 18 (depends on 16) The probe pin according to claim 16, wherein the metallic alloy comprises 0.1% by weight to 0.6% by weight zirconium. ### Claim 19 (depends on 16) The probe pin according to claim 16, wherein the metallic alloy comprises 0.01% by weight to 0.5% by weight yttrium and/or 0.01% by weight to 0.5% by weight cerium. ### Claim 20 (depends on 16) The probe pin according to claim 16, wherein the metallic alloy comprises a grain refinement and a higher extensibility compared to at least 99.999% pure rhodium. ### Claim 21 (depends on 16) The probe pin according to claim 16, wherein the hardness of the metallic alloy in hard-drawn condition ranges from 500 HV to 750 HV and/or the hardness in a heat-treated condition ranges from 400 HV to 650 HV. ### Claim 22 (depends on 16) The probe pin according to claim 16, wherein the jacket element fully surrounds the core element in a circumferential direction and partly surrounds the core element in a longitudinal direction. ### Claim 23 (depends on 16) The probe pin according to claim 16, further comprising an electrically conductive layer-like encompassing element fully surrounding the electrically insulating jacket element in a circumferential direction and at least partly in a longitudinal direction, and wherein the electrically conductive element counteracts cross-talk between probe pins arranged next to each other. ### Claim 24 (depends on 16) The probe pin according to claim 16, wherein the distal contact section is conical in shape. ### Claim 25 (depends on 16) The probe pin according to claim 16, wherein the core element comprises a proximal contact section for electrical contacting with a probe card. ### Claim 26 A method for producing a probe pin for electronic testing of semi-conductor elements, wherein the probe pin comprises an electrically conductive core element comprising a metallic alloy and an electrically insulating jacket element, wherein the jacket element surrounds the core element over regions thereof and the core element comprises a distal contact section for electrical contacting the probe pin with a semi-conductor element, the method comprising the steps of: a. providing a cylinder-like pre-mold comprising the metallic alloy forming the core element, wherein the metallic alloy comprises at least 67% by weight rhodium; 0.1% by weight to 1% by weight zirconium; up to 1% by weight yttrium; and up to 1% by weight cerium; b. drawing the pre-mold into a wire; c. subdividing the wire into wire-sections to provide the electrically conductive core element of the probe pin; d. applying the electrically insulating jacket element onto the core element; and e. providing a cone-like distal contact section of the core element. ### Claim 27 (depends on 26) The method according to claim 26, further comprising hardening the metallic alloy through a temperature treatment to adjust the hardness. ### Claim 28 (depends on 27) The method according to claim 27, wherein the temperature treatment is performed at a temperature between 150° C. and 600° C. and for a period of at least 10 minutes. ### Claim 29 (depends on 26) The method according to claim 26, wherein step e. comprises etching to produce the cone-like distal contact section of the core element. ### Claim 30 (depends on 26) A probe pin for electronic testing of semi-conductor elements manufactured according to claim 26.