Method for manufacturing semiconductor chip
AssigneeCanon Kabushiki Kaisha
InventorTakeshi Shibata
Life of this patent
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Abstract
There is provided a method for manufacturing semiconductor chips in which the chips as many as possible are arranged on one substrate and these chips can be cut with high accuracy in a relatively simple process. For such occasion on a wafer, short sides of the semiconductor chips are laid out to be inclined at an angle of 5° or less to a crystal orientation of the wafer. Thereafter, a laser stealth dicing method is used to form a plurality of first dicing lines along long sides of the individual semiconductor chips and a plurality of second dicing lines along short sides thereof.
Claims9
A method for manufacturing a plurality of semiconductor chips from a single wafer comprising the steps of:
- laying out the plurality of semiconductor chips on the wafer;
- forming a layer of modified regions within the wafer by irradiating the wafer with laser light while moving the wafer, the forming step being a dicing line formation step for forming a plurality of first dicing lines along long sides of the semiconductor chips and a plurality of second dicing lines along short sides of the semiconductor chips that are shorter and more than the first dicing lines;
- and
- breaking the wafer along the first dicing lines and the second dicing lines, wherein
- the second dicing line is inclined at an angle of 5° or less to a crystal orientation of the wafer.
A method for manufacturing an inkjet print head for manufacturing a plurality of semiconductor chips for the inkjet print head from a single wafer, comprising the steps of:
- forming energy generating elements and electrical connection portions corresponding to the plurality of semiconductor chips respectively on the wafer;
- forming an ejection opening formation member in which ink supply passages corresponding to the plurality of semiconductor chips respectively are formed on the wafer;
- forming modified regions within the wafer by irradiating the wafer with laser light while moving the wafer, the forming step being a dicing line formation step for forming a plurality of first dicing lines consisting of layers of the modified regions along long sides of the semiconductor chips and a plurality of second dicing lines along short sides of the semiconductor chips that are shorter and more than the first dicing lines;
- and
- breaking the wafer along the first dicing lines and the second dicing lines, wherein
- the second dicing line is inclined at an angle of 5° or less to a crystal orientation of the wafer.
Dependencies are inferred from the claim text.