Pixel of a CMOS Imager of an Optical Detector
AssigneesThales, Commissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsJean-Luc Raymond REVERCHON, Eric BELHAIRE, Philippe BOIS
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Abstract
The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, and a first switch connected between the infrared photodiode and the conversion circuit.
Claims23
A pixel of a CMOS imager, the pixel comprising:
- an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers;
- a conversion circuit for receiving electrons and to deliver delivering a voltage with a value varying as a function of the number of received electrons;
- a first switch connected between the infrared photodiode and the conversion circuit;
- an electron reservoir, that is a buried photodiode;
- and
- a first diffusion node connected between the first switch and the conversion circuit;
- wherein the first switch is movable between an open position and a closed position, and the electron reservoir and the first diffusion node are connected in the closed position of the first switch.
A CMOS imager comprising at least one pixel that comprises:
- an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers;
- a conversion circuit for receiving electrons and delivering a voltage with a value varying as a function of the number of received electrons;
- a first switch connected between the infrared photodiode and the conversion circuit:
- an electron reservoir that is a buried photodiode;
- and
- a first diffusion node connected between the first switch and the conversion circuit;
- wherein the first switch is movable between an open position and a closed position, and the electron reservoir and the first diffusion node are connected in the closed position of the first switch.
A camera comprising at least one CMOS imager that comprises at least one pixel that comprises:
- an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers;
- a conversion circuit for receiving electrons and delivering a voltage with a value varying as a function of the number of received electrons;
- a first switch connected between the infrared photodiode and the conversion circuit:
- an electron reservoir that is a buried photodiode;
- and
- a first diffusion node connected between the first switch and the conversion circuit:
- wherein the first switch is movable between an open position and a closed position, and the electron reservoir and the first diffusion node are connected in the closed position of the first switch.
Dependencies are inferred from the claim text.