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US 2016/0240780 A1Published application
Magnetoresistive Tunnel Junction
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChwen Yu
Life of this patent
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Abstract
A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.
Claims20
A method for forming a Magnetoresistive Tunnel Junction (MJT), the method comprising:
- disposing a magnetic, substantially circular reference layer on a first electrode;
- disposing a resistive layer onto the reference layer;
- disposing a magnetic, substantially circular free layer on the resistive layer;
- and
- disposing a second electrode so as to be connected to the free layer;
- wherein the reference layer produces a first magnetic core in a first direction, and the free layer produces a second magnetic core in a second direction, different from the first direction.
3 more elements
A method for forming a Magnetoresistive Tunnel Junction (MTJ), the method comprising:
- positioning a magnetic reference layer between a first electrode and a resistive layer, the magnetic reference layer having a first magnetic vertical core;
- and
- positioning a magnetic free layer between the resistive layer and a second electrode, the magnetic free layer having a second magnetic vertical core;
- wherein the magnetic reference layer and the magnetic free layer are positioned so the first magnetic vertical core is prevented from overlapping with the second magnetic vertical core.
1 more element
A method for forming a Magnetoresistive Tunnel Junction (MTJ), the method comprising:
- connecting a magnetic reference layer having a first magnetic vertical core to a first electrode;
- positioning a resistive layer over the magnetic reference layer;
- and
- positioning a magnetic free layer having a second magnetic vertical core over the reference layer, wherein the magnetic free layer is positioned so that the second magnetic vertical core does not overlap the first magnetic vertical core.
1 more element
Dependencies are inferred from the claim text.