Multilayer-stacked resistive random access memory device
AssigneeNational Tsing Hua University
InventorsTri-Rung YEW, Ying-Chan HUNG, Tsang-Hsuan WANG, Pin CHANG
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Abstract
A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.
Claims11
A multilayer-stacked resistive random access memory device comprising:
- first and second electrode layers;
- a resistive oxide layer which is electrically coupled to said first and second electrode layers, which exhibits resistive switching characteristics, and which includes a first metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof;
- a sulfide layer contacting said resistive oxide layer, disposed between said resistive oxide layer and said first electrode layer, and including a metal sulfide that contains a second metal that is the same as said first metal, and
- a conductive oxide layer disposed between said resistive oxide layer and said second electrode layer;
- wherein said sulfide layer cooperates with said resistive oxide layer to form a p-n junction therebetween.
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Dependencies are inferred from the claim text.