Multi-Value Nonvolatile Organic Resistive Random Access Memory and Method for Preparing the Same

Abstract

Disclosed are a multi-value nonvolatile organic resistive random access memory and a method for preparing the same. The resistive random access memory comprises a top electrode, a bottom electrode and a middle functional layer located between the top electrode and the bottom electrode, the middle functional layer is at least two layers of parylene. The method comprises the steps of: growing material for the bottom electrode using physical vapor deposition method on a substrate; growing sequentially multiple layers of parylene on the bottom electrode by polymer chemical vapor deposition; defining the via for leading out the bottom electrode by lithography and etching; growing material for the top electrode on the parylene materials by using physical vapor deposition process, defining the top electrode material by lithography and lift-off, and leading out the bottom electrode.

Dependencies are inferred from the claim text.