Memory device and method for fabricating the same
AssigneeMacronix International Co., Ltd.
InventorsYu-Yu Lin, Feng-Min Lee
Life of this patent
Estimating the term…
Abstract
A memory device comprises a substrate, a first electrode layer, a spacer, a memory layer and a second electrode layer. The substrate has a recess. The first electrode layer is formed in the recess and has a top surface exposed from an opening of the recess. The spacer covers on a portion of the top surface, so as to define a contact area on the top surface. The memory layer is formed on the contact area. The second electrode layer is formed on the memory layer and electrically connected to the memory layer.
Claims16
A memory device, comprising:
- a substrate, having a recess;
- a first electrode layer, formed in the recess and having a first top surface exposed from an opening of the recess
- a dielectric layer, formed on the substrate and having at least one through hole surrounding the opening of the recess;
- a spacer, formed on sidewalls of the through hole, extending into the recess and in contact with the first top surface and a second top surface of the substrate, so as to define a contact area on the first top surface;
- a memory layer, formed on the contact area;
- and
- a second electrode layer, formed on the memory layer and electrically connected to the memory layer.
(canceled)
A method for fabricating a memory device, comprising:
- providing a substrate having at least one recess;
- forming a first electrode layer in the recess, wherein the first electrode layer has a first top surface exposed from an opening of the recess;
- forming a dielectric layer on the substrate;
- patterning the dielectric layer to form at least one through hole surrounding the opening of the recess;
- forming a spacer on sidewalls of the through hole, extending into the recess and in contact with the first top surface and a second top surface of the substrate, so as to define a contact area on the first top surface;
- forming a memory layer on the contact area;
- and
- forming a second electrode layer on the memory layer to make the second electrode layer electrically connected to the memory layer.
12-13. (canceled)
Dependencies are inferred from the claim text.