Manufacturing method of magnetoresistive effect element

A manufacturing method of a magnetoresistive effect element comprising:

• a first step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed;
• a second step of cooling the substrate after the first step;
• a third step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the second step;
• a fourth step of raising a temperature of the substrate after the third step, to a temperature that is higher than a dew-point temperature and is lower than a crystallization temperature of the other one of the magnetization free layer and the magnetization fixed layer;
• a fifth step of forming a top electrode on the other one of the magnetization free layer and the magnetization fixed layer after the fourth step;
• and
• a sixth step of raising the temperature of the substrate after the fifth step, to a temperature equal to or higher than the crystallization temperature.