Systems and Methods for Implementing Robust Magnetoelectric Junctions

A magnetoelectric junction comprising:

• a first ferromagnetic fixed layer;
• a ferromagnetic free layer that is magnetically anisotropic;
• a seed layer;
• a cap layer;
• and
• a dielectric layer that is disposed between the first ferromagnetic fixed layer and the ferromagnetic free layer;
• wherein:
• one of the seed layer and the cap layer is disposed adjacently to a ferromagnetic layer;
• the first ferromagnetic fixed layer is magnetized in a first direction;
• the ferromagnetic free layer can adopt a magnetization direction that is either substantially parallel with or substantially antiparallel with the first direction;
• when a potential difference is applied across the aggregate of the cap layer, the first ferromagnetic fixed layer, the dielectric layer, the ferromagnetic free layer, and the seed layer, the coercivity of the ferromagnetic free layer is reduced for the duration of the application of the potential difference;
• and
• at least one of the seed layer and the cap layer comprises one of:
• Molybdenum, Tungsten, Iridium, Bismuth, Rhenium, and Gold.